Contribution of the charge image potential to carrier confinement in graded Si-based quantum wells

Pereira, T. A. S.; Caetano, E. W. S.; Freire, J. A. K.; Freire, V. N.; Farias, G. A.

doi:10.1590/s0103-97332004000400043

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2006

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 7 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The aim is to search for high-k dielectric based light emission devices, which can be important in developing silicon-based technology for future nanooptoelectronic device integration. The dielectric mismatches among the materials of QWs are included through the conventional image potential for a point charge Q near an interface [8].…”

Section: Introductionmentioning

confidence: 99%

Energy levels in Si and SrTiO3-based quantum wells with charge image effects

Pereira¹,

Bezerra²,

Freire³

et al. 2006

Braz. J. Phys.

Self Cite

View full text Add to dashboard Cite

In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO 3 -based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO 2 (SrTiO 3 ) interface thickness effects.

show abstract

Section: Introductionmentioning

confidence: 99%