Energy levels in Si and SrTiO3-based quantum wells with charge image effects

Abstract

In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO 3 -based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO 2 (SrTiO 3 ) interface thickness effects.

Quantum Confinement in Oxide Heterostructures: Room-Temperature Intersubband Absorption in SrTiO3/LaAlO3 Multiple Quantum Wells

“…20 In addition to exotic phenomena arising from the correlated physics of d-electrons, TMO heterostructures offer an impressive range of highly controllable band alignments 21 and can be engineered with large band offsets, suggesting extreme quantum confinement. 22 The combination of large and controllable band offsets with the possible interplay between quantum confined particles and correlated phenomena in TMO QW heterostructures could lead to the fabrication of QW devices with advanced functionalities. For example, by incorporating ferroelectric BaTiO3 into QW heterostructures one could engineer structures whose quantum-confined states experience a Stark shift in response to internal fields from ferroelectric domains, allowing for ferroelectric switching of absorption energy and offering an extra degree of freedom as compared to externally-biased GaAs QWs.…”

“…In addition to exotic phenomena arising from the correlated physics of d -electrons, TMO heterostructures offer an impressive range of highly controllable band alignments and can be engineered with large band offsets, suggesting extreme quantum confinement . The combination of large and controllable band offsets with the possible interplay between quantum-confined particles and correlated phenomena in TMO QW heterostructures could lead to the fabrication of quantum well (QW) devices with advanced functionalities.…”

Photochemical Charge Separation and Dye Self-Oxidation Control Performance of Fluorescein, Rose Bengal, and Triphenylamine Dye-Sensitized Solar Cells

“…In part, this promotion is from a stabilization of the polar excited state. Because the ETLs have large dielectric constants (ε = 100 for TiO 2 and ε = 300 for SrTiO 3 ), they stabilize polar excited states. This is analogous to the red shift of the fluorescence maximum for tryptophan in polar solvents …”

Oxide‐Based Optoelectronics

“…[5,[52][53][54][55][56][57] Although it is challenging to purposefully engineer thin film heterostructures to display such emergent interfacial properties, TMO thin films also allow for highly predictable band engineering and can be utilized to enable quantum confinement via QWs. [58,59] A QW is an engineered thin film structure consisting of two (or more) distinct materials layered periodically. The conduction band (CB) offset between these materials provides quantum confinement of electrons along one direction z, while the valence band offset confines holes.…”