Characterization of PbTe p - n+ junction grown by molecular beam epitaxy

Abstract

In this work we investigate the electrical properties of PbTe p − n + junction. Mesa diodes were fabricated from p − n + PbTe layers grown on (111) BaF 2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C 2 xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p − n + PbTe diode confirm that it is very suitable for infrared detection.

Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

“…Other techniques previously used to grow PbTe thin films have included molecular beam epitaxy [21,22], chemical vapor deposition [23,24], pulsed laser deposition [25,26] and hot-wall epitaxy [15]. One of the major drawbacks of these techniques is the use of high temperatures for the growth of films which results in heatinduced interdiffusion [27] of elements in adjacent structure layers, which can degrade deposit quality.…”

Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

“…This result indicates that for electron concentration higher than 10 18 cm −3 , a onesided abrupt PbTe junction is formed with the depletion region located practically at the p side. For this type of junction, the hole concentration can be determined by the slope of the 1/C 2 e xV plot and the depletion width can be obtained from the CxV characteristic [5].…”

“…The current versus voltage characteristics of all diodes were measured in a self-assembled automatic system composed of a programmable power supply, an ammeter and a voltmeter [5]. Fig.…”

“…The photodiodes are normally made from PbTe layers grown on BaF 2 substrates or on Si substrates using fluoride buffer layers. With device performance comparable to the metal Schottky barriers, PbTe p − n junctions have recently attracted attention as infrared sensors [3][4][5]. It is well known that the electrical characteristics of the p-n junction strongly influence the detector performance.…”