Structural and chemical properties of ZnSe-Fe electrodeposited granular films

Moraes, A. R. de; Mosca, D. H.; Schreiner, W. H.; Mattoso, N.; Silveira, Eduardo

doi:10.1590/s0103-97332002000200038

Cited by 9 publications

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“…Binary semiconductors are considered important technological materials because of their potential applications in optoelectronics devices such as, solar cell, IR detectors, & laser,etc [1]. Zinc selenide is well known II-VI semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical cell performance of electrodeposited iron doped zinc selenide thin film

Lohar

Thombare

Shinde

et al. 2013

2013 International Conference on Energy Efficient Technologies for Sustainability

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In the present investigation, we are discussing the results on photoelectrochemical cell performance of iron doped zinc selenide thin films by Electrodeposition. Thin films were deposited by Galvanostatically as well as potentiostatically at an aqueous solution onto stainless steel substrate as well as ITO (indium tin oxide). Precursor of zinc selenide is zinc sulphate (ZnSO4), selenium dioxide (SeO2) and ferrous sulphate (FeSO4). The deposited films were characterized by different physicochemical characterization such as, for structural study X-ray diffraction study was used, Scanning electron microscopy (SEM) for surface morphology, optical absorption study made by UV spectrometer and it showed that the semiconductor nature of the electrodeposited zinc selenide thin films with band gap 2.6 eV and PEC performance shows that Isc is 360 mA and Voc is 135 mV.

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Section: Introductionmentioning

confidence: 99%