2002
DOI: 10.1590/s0103-97332002000200037
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Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering

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Cited by 9 publications
(11 citation statements)
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“…These effects show a significant effect of the surface functionality of submicron filler particles on the elastomeric composites mechanical properties with rice husk processing products. The strength values obtained in this work for samples № 3 (RHAPP nano), № 4 (RHAPP nano H 2 O 2 ), № 5 (RHAPP nano TESPT), № 6 (RHAPP nano H 2 O 2 /TESPT) exceeding 20 MPa, are considerably higher than values about 13 MPa obtained in other investigations [23,28,30].…”
Section: Resultscontrasting
confidence: 72%
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“…These effects show a significant effect of the surface functionality of submicron filler particles on the elastomeric composites mechanical properties with rice husk processing products. The strength values obtained in this work for samples № 3 (RHAPP nano), № 4 (RHAPP nano H 2 O 2 ), № 5 (RHAPP nano TESPT), № 6 (RHAPP nano H 2 O 2 /TESPT) exceeding 20 MPa, are considerably higher than values about 13 MPa obtained in other investigations [23,28,30].…”
Section: Resultscontrasting
confidence: 72%
“…Materials Today: Proceedings. 2019; [28] Vilmin F, Bottero I, Travert A. Mint: Reactivity of bis [3-(triethoxysilyl) propyl] tetrasulfide (TESPT) silane…”
Section: Discussionmentioning
confidence: 99%
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“…Subsequently, in-situ boron doped silicon films were deposited in a single cosputtering process, using an undoped silicon target (with a purity of 99.999%) and a boron target (with a purity of 99.999%) at the same time. [15][16][17] The co-sputtering process was performed at room temperature with a pressure range of 1.5 mT to 6 mT. The RF power density applied for sputtering the undoped silicon was $3.1 W/cm 2 , while the RF power density was varied with a range of from 1.9 W/cm 2 to 3.1 W/cm 2 for the boron target to obtain different dopant concentrations.…”
mentioning
confidence: 99%
“…The hydrogen concentration and the structural disorder are both influenced by the substrate's temperature, and both variables are required to explain an observed local minimum of gap, but the silicon monohydride (SidH) bond density only accounts for this dependency [26]. All of these outcomes support the assertion that even though research on the a-Si: H material has improved in terms of the latter's ability to be doped to increase its transport capabilities [27,28], it's still challenging to regulate the factors that affected its optical qualities. Instead, because much less material is needed to respond and totally absorb the light, ultra-thin film optoelectronic devices, particularly those built of hydrogenated amorphous silicon a-Si: H, have the potential to be less expensive.…”
Section: Introductionmentioning
confidence: 82%