Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy

Ribeiro, Miguel; Yavich, B.; Tribuzy, C.V.-B.; Souza, P. L.

doi:10.1590/s0103-97332002000200032

Cited by 3 publications

(1 citation statement)

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“…The PL peak at 1.508 eV corresponds to the AlInAs band edge emission and the PL peak at 1.49 eV can be assigned to the transitions between an acceptor level and the conduction band, originated from the unintentional doping of the layers by residual C ( p-type doping) found in the chamber. Ribeiro et al 33 reported the presence of a PL peak associated with a carbon-doped AlInAs, at 15 meV below that of undoped AlInAs layer, which seems similar to our observation. The alloy composition extracted from Fig.…”

Section: Optical Properties and Background Dopingsupporting

confidence: 92%

Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates

Diallo

Mbeunmi

El-Gahouchi

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The quality and properties of epitaxial films are strongly determined by the reactor type and the precursor source phase. Such parameters can impose limitations in terms of background doping, interface sharpness, clustering, phase separation, and homogeneity. The authors have implemented a hybrid epitaxy technique that employs, simultaneously, vapor and solid sources as group III precursors. The system combines the high throughput and the versatility of gas sources as well as the high purity of solid sources. Using this technique, the authors successfully demonstrated epitaxial growth of Al 0.48 In 0.52 As and Ga 0.47 In 0.53 As layers on Fe-doped semi-insulating InP (001) substrates with interesting properties, compared with the epilayers grown by more standard techniques (chemical beam epitaxy, metal-organic chemical vapor deposition, and MBE). For AlInAs growth, trimethylindium and solid aluminum were used as In and Al precursors, respectively. In the case of GaInAs, triethylgallium and solid indium were used, respectively, as Ga and In precursors. Thermally cracked arsine (AsH 3) was used as an As (group V) precursor for both alloys. The AlInAs and GaInAs epilayers grown at a temperature of 500°C exhibited featureless surfaces with RMS roughness of 0.2 and 1 nm, respectively. Lattice mismatch is of 134 ppm, for AlInAs, and −96 ppm, for GaInAs, which were determined from high-resolution x-ray diffraction (HR-XRD) patterns and showed a large number of Pendellösung fringes, indicating a high crystalline quality. An FWHM of 18.5 arcs was obtained for GaInAs epilayers, while HR-XRD mapping of a full 2-in. wafer confirmed a viable lattice mismatch homogeneity (standard deviation of 0.026%) for as-grown layers. The authors observed room-temperature background doping values as low as 3 × 10 15 cm −3 , for AlInAs, and 1 × 10 15 cm −3 , for GaInAs. Analysis of the PL spectra at 20 K showed an FWHM of 8 meV, for AlInAs, and 9.7 meV, for GaInAs, demonstrating a very good optical quality of the epilayers. In addition, they have investigated the effects of the growth temperature and of the arsine pressure on epilayer properties. They also discuss the optimum conditions for the growth of high-quality Al 0.48 In 0.52 As and Ga 0.47 In 0.53 As layers on InP (001) substrates using this hybrid epitaxy technique.

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Section: Optical Properties and Background Dopingsupporting

confidence: 92%