On the Heat Capacity of Pure Elements and Phases

Ferreira, Itamar

doi:10.1590/1980-5373-mr-2020-0529

Cited by 7 publications

(4 citation statements)

References 29 publications

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“…where W is the Hamaker constant of Cu and L is the latent heat of melted Cu per unit volume [51,52]. The third term of Equation ( 2) describes the repulsive interaction that tends to decrease the F l , and the fourth term is the undercooling energies; they are both functions of melting layer thickness.…”

Section: Discussionmentioning

confidence: 99%

Reorientation Mechanisms of Graphene Coated Copper {001} Surfaces

Song

Yao

et al. 2023

Metals

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Engineering the surface orientation of face-centered cubic (fcc) metals to the close-packed {111} plane can significantly enhance their oxidation resistance. However, owing to the synergetic effect of surface energy density (γ˙) and strain energy density (ω), such close-packed surface orientation can currently only be achieved by atomic-level thin film epitaxy or monocrystallization of polycrystalline metals. In this study, we characterized the microstructures of pure copper (Cu) foil and two types of graphene-coated Cu (Gr/Cu) foils and observed a 12~14 nm thick reconstructed surface layer with the {111} orientation in the high-temperature deposited Gr/{001} Cu surface. Combining the statistical results with thermodynamic analysis, we proposed a surface melting-solidification mechanism for the reconstruction of the Cu surface from {001} orientation to {111} orientation. This process is dominated by Gr/Cu interfacial energy and is particularly promoted by high-temperature surface melting. We also validated such a mechanism by examining Cu surfaces coated by h-BN (hexagonal boron nitride) and amorphous carbon. Our findings suggest a possible strategy to enhance the surface properties of fcc metals via engineering surface crystallography.

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Section: Discussionmentioning

confidence: 99%

Reorientation Mechanisms of Graphene Coated Copper {001} Surfaces

Song

Yao

et al. 2023

Metals

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“…The T -dependent cross-plane thermal conductivities of the 4H-SiC substrate are obtained from a separate 785-TTR measurement of a bare 4H-SiC, the same as that used for SAB to 4H-SiC. The T -dependent specific heat of Al is taken from refs , , and that of 4H-SiC is from. refs , .…”

Section: Methodsmentioning

confidence: 99%

“… a Obtained by the four-probe technique. b Taken from refs ,, . c Taken from ref . d Taken from ref . e Taken from ref . …”

Section: Methodsmentioning

confidence: 99%

Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

Ma,

Xiao,

Meng

et al. 2024

ACS Appl. Mater. Interfaces

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Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBR eff ) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The measured temperature-dependent cross-plane thermal conductivity of the 4H-SiC thin film exhibits good quantitative agreement with calculation by density functional theory (DFT) including higher-order fourphonon (4ph) scattering, especially at high temperatures (>400 K). The theoretical calculations indicate the non-negligible importance of 4ph scattering in 4H-SiC high-temperature applications, due to the significantly increasing 4ph scattering rate at increasing temperature and strong temperature dependence of 4ph scattering. The measured nonzero but small TBR eff (2.33 + 0.43/−1.15 m 2 K/GW) at the SiC−SiC interface is analyzed with molecular dynamics (MD) simulation, indicating that a strong bonding interface with an extremely thin interlayer is formed by the SAB process. Two-dimensional finite element simulations of the experimental equivalent structures are further investigated, and the significant effects (at least 19 °C) of TBR eff on the maximum temperature (T max ) are confirmed. This study provides insight into the fundamental phonon transport and interface thermal transport mechanism in SAB SiC-on-SiC and paves the way for improved 4H-SiC efficient device manufacturing and thermal management.

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“…Aiming to validate the effect of the heterogeneous nucleation process on the specific molar capacity of the Al-𝛼𝛼 phase (FCC_A1) referring to a ternary Al-6wt%Cu-3wt%Si alloy, a brief description of the model of the molar specific heat capacity of solids firstly, derived in 2019 by Ferreira et al applied to a wide range of pure solid materials [18,35], transition metals [36], phases [37] and ceramics [37,38] will be performed.…”

Section: Solidsmentioning

confidence: 99%

On the Continuous Mechanics First and Second-Order Formulations for Nonequilibrium Nucleation: Derivation and Applications

Ferreira

Moreira

2023

Int J Thermophys

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Nucleation and growth are phenomena that can be applied to several fields of science and technology. On the other hand, nucleation depends on the cooling rate, dislocating the equilibrium, as surface energy depends on the created and deformed surface area. The crystalline/glassy transition limit dependence on the thermal gradient is also analyzed. In this paper, under continuum mechanics, first-and second-order nonequilibrium nucleation formulation models are derived, and a phase-change moving interface is considered in the thermal field. Important nucleation variables are plotted against the cooling rate for several nucleation angles. It is coupled with a theoretical model for the molar-specific heat capacity of solids to analyse its dependence on nucleation kinetics.

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On the Heat Capacity of Pure Elements and Phases

Cited by 7 publications

References 29 publications

Reorientation Mechanisms of Graphene Coated Copper {001} Surfaces

Reorientation Mechanisms of Graphene Coated Copper {001} Surfaces

Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

On the Continuous Mechanics First and Second-Order Formulations for Nonequilibrium Nucleation: Derivation and Applications

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