Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

Abstract

Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBR eff ) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The measured temperature-dependent cross-plane thermal conductivity of the 4H-SiC thin film exhibits good quantitative agreement with calculation by density functional theory (DFT) including higher-order fourphonon (4ph) scattering, especially at high temperatures (>400 K). The theoretical calculations indicate the non-negligible importance of 4ph scattering in 4H-SiC high-temperature applications, due to the significantly increasing 4ph scattering rate at increasing temperature and strong temperature dependence of 4ph scattering. The measured nonzero but small TBR eff (2.33 + 0.43/−1.15 m 2 K/GW) at the SiC−SiC interface is analyzed with molecular dynamics (MD) simulation, indicating that a strong bonding interface with an extremely thin interlayer is formed by the SAB process. Two-dimensional finite element simulations of the experimental equivalent structures are further investigated, and the significant effects (at least 19 °C) of TBR eff on the maximum temperature (T max ) are confirmed. This study provides insight into the fundamental phonon transport and interface thermal transport mechanism in SAB SiC-on-SiC and paves the way for improved 4H-SiC efficient device manufacturing and thermal management.