Effects of Potential Deposition on the Parameters of ZnO dye-sensitized Solar Cells

Abstract

Dye-sensitized solar cells (DSSCs) are a feasible option for photovoltaic energy. Zinc oxide is an n-type semiconductor employed as photoanode on DSSCs. ZnO thin films were electrodeposited to study the effects of different potentials applied during deposition. SEM images, XRD and UV-Vis analysis were conducted to reveal the morphologic, structural and optical properties of the films at three potentials. DSSCs were assembled and the photovoltaic parameters were obtained through J-V plots. DSSC with 0.031% of efficiency was demonstrated at -1.4 V of deposition potential.

Preparation of Green-Emissive Zinc Oxide Composites Using Natural Betacyanin Pigment Isolated from Red Dragon Fruit

“…In this case, the betacyanin pigment would act as the sensitizer. The values of the bandgap energy in this work were close to other reported ZnO dye-sensitized solar cells [21] and natural pigment-modified ZnO materials prepared from laali [22].…”

Electrochemical growth and characterisation of ZnO nanostructures for dye‐sensitised solar cells

“…Nunes et al employed the ZnO nanorods prepared by electrochemical methods for the DSSC and reported as much as 0.31% efficiency. However, the lower value of the efficiency was attributed to the carriers recombination owing to the non‐uniformity of the FTO substrate [3]. Tanmoy et al prepared and studied the DSSC based on the sulphur/nitrogen co‐doped graphene dot decorated ZnO nanorods and reported 0.293% cell efficiency [24].…”

“…Further, the growth of ZnO nanostructures can be controlled using the electrochemical process parameters, such as deposition time, applied potential, molar concentration, oxygen flow, and bath temperatures. Nunes et al [3] presented the preparation of ZnO nanorods by varying the negative potential from −1.4 to −0.5 V and employed as a photoanode material in DSSCs. Scanning electron microscopy (SEM) study confirmed the preparation of nanosheets with nodular structure by varying the applied potential.…”

Physical Properties of Cu Doped ZnO Nanocrystiline Thin Films

“…Zinc oxide is an environmentally safe material, as it has a high binding energy at room temperature (60 meV) and also has a large direct energy gap (3.37 eV) [1][2][3] and thus can be used in various hardware applications , such as solar cells , smart windows, gas sensors, piezoelectric transducers, transparent high power electronics, varistors, and ultraviolet (UV) light-emitters [4][5][6] . Sub-Extra energy levels will be generated in the band gap of the semiconductors when it is doped with metal 7,8 .…”