Synthesis and Crystal Structure of Three New Quaternary Compounds in the system Cu-Mn-III-Se3 (III = Al, Ga, In)

Abstract

Chalcogenide alloys CuMnAlSe 3 , CuMnGaSe 3 and CuMnInSe 3 , new members of the semiconductor system I-II-III-VI 3 , were synthetized and structurally characterized by the Rietveld method using X-ray powder diffraction data. All compounds crystallize in the tetragonal space group P4 2c (Nº 112) with a CuFeInSe 3 -type structure.

Synthesis and crystal structure determination of the new olivine-type compound Mn2SnSe4

“…The interatomic distances are shorter than the sum of the respective ionic radii for structures tetrahedrally bonded [28]. The Mn-Se [mean value 2.72(2)Å] and Sn-Se [mean value 2.53(2)Å] bond distances, compare well with the same distances found in related adamantane compounds such as Cu 2 SnSe 3 [29], CuMn 2 InSe 4 [30], MnIn−2Se 4 [31], Cu 2 MnSnSe 4 [32] and the systems CuGa (1−X) Mn (X) Se 2 [33] and CuMn-III-Se 3 (III= Al, Ga, In) [34]. All of these phases were found in the Inorganic Crystal Structure Database (ICSD) [12].…”

Crystal structure of the ternary semiconductor Cu2In14/3□4/3Se8determined by X-ray powder diffraction data

“…The Cu–Se [2.419(8) Å] and In–Se [2.523(8) Å average] bond distances compare well with those observed in other adamantine structure compounds such as CuInSe 2 (2.432–2.591 Å) (Knight, 1992), Cu 2 FeSnSe 4 (2.417 Å) (Roque-Infante et al ., 1997), Cu 2 SnSe 3 (2.415 Å average) (Delgado et al ., 2003), CuFe 2 (Al,Ga,In)Se 4 (2.417–2.50 Å average) (Delgado et al ., 2008, 2015), CuFe(Al,Ga,In)Se 3 (2.421–2.520 Å average) (Mora et al ., 2007; Delgado et al ., 2009), CuNi(Ga,In)Se 3 (2.420–2.500 Å average) (Delgado et al ., 2010), Cu 2 GeSe 4 (2.42 Å) (Choi et al ., 2013), CuZn(Al,Ga,In)Se 3 (2.427–2.530 Å average) (Delgado et al ., 2016), CuMn 2 InSe 4 (2.447–2.594 Å) (Delgado and Sagredo, 2016).…”