Two-dimensional (2D) van derWaals semiconductors have been the subject of intense research due to their low dimensionality and tunable optoelectronic properties. However, the stability of these materials in air is one of the important issues that needs to be clarified, especially for technological applications. Here the time evolution of GaSe oxidation from monolayer to bulk is investigated by Raman spectroscopy, photoluminescence emission, and x-ray photoelectron spectroscopy. The Raman spectroscopy study reveals that GaSe monolayers become oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process taking roughly 5 h to penetrate up to 3 layers of GaSe. After oxidation, GaSe single-layers decompose into amorphous Se which has a strong Raman cross section under red excitation. The present study provides a clear picture of the stability of GaSe in air and will guide future research of GaSe from single-to few-layers for the appropriate development of novel technological applications for this promising 2D material.

We report on Raman scattering of GaSe for thicknesses varying from bulk down to bilayer. The Raman spectra using 532 nm excitation show a strong dependence on layer thickness. The two out-of-plane modes of GaSe shift in opposite directions as the thickness increases. However, from pentalayer the Raman spectra of GaSe do not show any further change thus reaching bulk nature in terms of optical properties. We also perform ab initio density functional theory calculations for the geometry, the electronic band structure, and the Raman frequencies for bulk down to one monolayer. Good agreement with the experimental results is found, and we reproduce the trend, driven by the number of layers, in the Raman shifts. Our results present the first systematic approach to a layer dependent Raman study of GaSe and answer contradictions reported in the literature.

of temperature in the range between 12 K and room temperature and an analysis of the relative intensitychangesfor all the bands. Based on a group theoretical analysis using the different possible space groupsfor this structure, thevibrational modes for t h e Raman spectra were obtained and compared with theexperimental data. A new space group is proposed for the crystal structure for this semiconductor,

In this work we utilize an alternative optical method based on thermal lens spectroscopy for characterizing the thermal diffusion in binary liquid mixtures. In this method, the thermal lens and the Soret signals are separated by a time interval to determine the Soret coefficients. As a demonstrative experiment, the Soret coefficients of isopropanol/water and acetone/water mixtures have been measured using that variant. Our results were compared with the recently published experimental and theoretical calculations and very good agreement was achieved.

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