2016
DOI: 10.1590/1980-5373-mr-2016-0210
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Grain-Boundary Resistance and Nonlinear Coefficient Correlation for SnO2-Based Varistors

Abstract: This work has focused on the electrical and microstructural properties of Nb 2 O 5 -doped SnO 2 -MnO 2 ceramics. The pellets were prepared by solid-state reaction method according to the system (99.5-x) SnO 2 -0.5 MnO 2 -x Nb 2 O 5 , on the following molar ratio x = 0.05; 0.10; 0.15; 0.20 and 0.25. Scanning electron microscopy and electrical measurements (ac and dc) were used to study the materials properties. The results showed that the increase of Nb 2 O 5 content in the SnO 2 -MnO 2 matrix has led to an inc… Show more

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Cited by 20 publications
(7 citation statements)
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“…Because varistor consists of a high resistance (or high potential barrier) grain boundary phase with a highly conductive grain, such a structure can be simulated by an equivalent circuit with a variable resistor for the grain boundary and a parallel circuit of a capacitor and an inductor for the conductive grain in series. 26 Circuit simulation (Multisim, NI), based on the change of resistance observed in Figure 7, on a circuit equivalent to the present setup qualitatively shows how changes in resistance impact the PSN output, which can subsequently impact the waveform response. This simulation replicates the slowdown of the voltage ramp rate due to the decreasing resistance with rising temperature.…”
Section: Changes In Resistance and Regulating Voltagementioning
confidence: 76%
“…Because varistor consists of a high resistance (or high potential barrier) grain boundary phase with a highly conductive grain, such a structure can be simulated by an equivalent circuit with a variable resistor for the grain boundary and a parallel circuit of a capacitor and an inductor for the conductive grain in series. 26 Circuit simulation (Multisim, NI), based on the change of resistance observed in Figure 7, on a circuit equivalent to the present setup qualitatively shows how changes in resistance impact the PSN output, which can subsequently impact the waveform response. This simulation replicates the slowdown of the voltage ramp rate due to the decreasing resistance with rising temperature.…”
Section: Changes In Resistance and Regulating Voltagementioning
confidence: 76%
“…For example, the image correlation method [22,23] is widely applied now. There is also a precise technique based on the triple points of grain boundaries [24,25] which can be followed by an electron backscatter diffraction (EBSD) method [26]. However, these methods have significant limitations (difficult sample preparation, requirement of conductive coatings, stability of electron beam for best data acquisition, etc.).…”
Section: Motivation and Aimsmentioning
confidence: 99%
“…Pianaro et al [10] reported to have obtained a nonlinear coefficient (α) of 8 and a breakdown electric field (E b ) of 1870 V cm −1 after conducting a detailed investigation on SnO 2 -CoO-Nb 2 O 5 varistor system. Orlandi et al [14] and Masteghin et al [15] also showed that the SnO 2 -MnO 2 -Nb 2 O 5 system can present a nonlinear coefficient (α) of 11 with a breakdown electric field (E b ) of 8786 V cm −1 .…”
Section: Introductionmentioning
confidence: 99%