Homogeneous large-area graphene layer growth on6H-SiC(0001)

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

“…Before graphene formation, the substrates were cleaned using the RCA method and HF etching in order to remove organic and inorganic contaminations, and surface oxides. The monolayer graphene was 4 prepared on the substrates by thermal decomposition of SiC in an inductively heated furnace under a highly isothermal condition at a temperature of 2000 ºC in an ambient argon pressure of 1 atm [5]. This method is known to produce homogenous, large area, and high quality graphene on SiC(0001) [5][6][14][15].…”

“…The monolayer graphene was 4 prepared on the substrates by thermal decomposition of SiC in an inductively heated furnace under a highly isothermal condition at a temperature of 2000 ºC in an ambient argon pressure of 1 atm [5]. This method is known to produce homogenous, large area, and high quality graphene on SiC(0001) [5][6][14][15]. Some monolayer graphene samples were prepared in situ by direct heating the substrate at a temperature of 1300 ºC under ultra high vacuum conditions.…”

“…The latter, epitaxial growth, is considered an alternative route more suitable for producing graphene wafers for electronic applications. Recently, homogeneous, large area, and high quality monolayer graphene was successfully prepared by epitaxial growth on the SiC(0001) surface [5][6]. In this process, the SiC(0001) substrate is heated at a high temperature in an argon atmosphere.…”

Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics

“…This EG can be directly patterned using standard lithography methods without requiring transfer as in the case of graphene grown by CVD. Wafer-scale EG grown on SiC by thermal decomposition of SiC [5,6] has been reported repeatedly, but this has seldom been achieved by CVD [14]. In the thermal decomposition procedure, growth under argon at atmospheric pressure was considered to be better than that under ultra high vacuum to obtain a more homogeneous graphene sample [6].…”

“…Since the discovery of graphene in 2004 [1], it has received significant interest as a contender in post-CMOS applications [2], as well as a promising candidate for fundamental studies, even being considered as a substitute for silicon in future micro-and nanoelectronic device applications [3][4][5][6]. Thus, a flurry of research with the goal of obtaining largearea graphene is in progress to realize graphene applications.…”