Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film

Simmons, J.G.

doi:10.1063/1.1702682

Cited by 3,698 publications

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References 6 publications

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“…As shown in Figs. 2 (14,15) in which the tunnel current is given by (15) where f(E) is the Fermi distribution function, DoS B(T) (E) is the density of states in the top (bottom) electrode, T(E) is the transmission probability at the given energy. At low temperatures the difference of the Fermi functions restricts the relevant energy E integral to eV E where μ is the chemical potential.…”

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confidence: 99%

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Britnell

Gorbachev

Jalil³

et al. 2012

Nano Lett.

757

722

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We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conductingchannel.

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confidence: 99%

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Britnell

Gorbachev

Jalil³

et al. 2012

Nano Lett.

757

722

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“…The relative dielectric constant of the ferrocenyl-alkanethiols has been considered to be equal to the dielectric constant of the alkyl chains (e r ¼ 2.1). 15 This expression can be accurately expressed by an hyperbolic function as follows: 17,18 V image x ð Þ ¼ À1:15:…”

Section: A Calculation Of the Barrier Potential Within The Tunnelingmentioning

confidence: 99%

“…Assuming an isotropic distribution of electron velocities in the metal electrodes, the tunneling current density through the junction can be calculated from the tunneling probability T 14,17,19 …”

Section: A Calculation Of the Barrier Potential Within The Tunnelingmentioning

confidence: 99%

Model of self assembled monolayer based molecular diodes made of ferrocenyl-alkanethiols

Duché

Planchoke

Dang

et al. 2017

Journal of Applied Physics

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There has been significant work investigating the use of self assembled monolayers (SAMs) made of ferrocenyl terminated alkanethiols for realizing molecular diodes, leading to remarkably large forward-to-reverse current rectification ratios. In this study, we use a multiband barrier tunneling model to examine the electrical properties of SAM-based molecular diodes made of HSC 9 Fc, HSC 11 Fc, and HSC i FcC 13Ài (0 i 13). Using our simple physical model, we reproduce the experimental data of charge transport across various ferrocenyl substituted alkanethiols performed by Nijhuis, Reus, and Whitesides [J. Am. Chem. Soc. 132, 18386-184016 (2010)] and Yuan et al.[Nat. Commun. 6, 6324 (2015)]. Especially, the model allows predicting the rectification direction in HSC i FcC 13Ài (0 i 13) based molecular diodes depending on the position of the ferrocenyl (Fc) moiety within the molecules. We show that the asymmetry of the barrier length at both sides of the Highest Occupied Molecular Orbital of the ferrocenyl moiety strongly contributes to the rectifying properties of ferrocenyl-alkanethiol based molecular junctions. Furthermore, our results reveal that bound and quasi-bound states play an important role in the charge transport. Published by AIP Publishing. [http://dx

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“…1). (19) This equation is a useful (and commonly used) semi-empirical parameterization that suggests that the rate of tunneling should depend exponentially on the width of a barrier (d), assumed to be rectangular, and on β (a parameter related to the height of the barrier).…”

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Charge Tunneling along Short Oligoglycine Chains

et al. 2015

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This work examines charge transport (CT) through self‐assembled monolayers (SAMs) of oligoglycines having an N‐terminal cysteine group that anchors the molecule to a gold substrate, and demonstrate that CT is rapid (relative to SAMs of n‐alkanethiolates). Comparisons of rates of charge transport‐using junctions with the structure AuTS/SAM//Ga2O3/EGaIn (across these SAMs of oligoglycines, and across SAMs of a number of structurally and electronically related molecules) established that rates of charge tunneling along SAMs of oligoglycines are comparable to that along SAMs of oligophenyl groups (of comparable length). The mechanism of tunneling in oligoglycines is compatible with superexchange, and involves interactions among high‐energy occupied orbitals in multiple, consecutive amide bonds, which may by separated by one to three methylene groups. This mechanistic conclusion is supported by density functional theory (DFT).

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Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film

Cited by 3,698 publications

References 6 publications

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Model of self assembled monolayer based molecular diodes made of ferrocenyl-alkanethiols

Charge Tunneling along Short Oligoglycine Chains

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