Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Britnell, L.; Gorbachev, Roman; Jalil, R.; Belle, Branson D.; Schedin, F.; Katsnelson, M. I.; Eaves, L.; Морозов, С. В.; Mayorov, Alexander S.; Peres, N. M. R.; Neto, A. H. Castro; Leist, Jon; Geǐm, A. K.; Пономаренко, Л. А.; Новоселов, К. С.

doi:10.1021/nl3002205

Cited by 788 publications

(813 citation statements)

References 20 publications

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“…~4 K). This fitting result is quite consistent with the raw R-T curve, which shows a dramatic increase of R j below 4 K. At low temperatures (T < 4 K), the tunneling current is determined by the density of states (DOS) in the graphene (D G ) and in the Bi 2 Se 3 (D TI ), which can be expressed as 11,12,17,32 where T(E) is the tunneling probability and the function ( ) is the Fermi-Dirac distribution function. In the low temperature region, the integral energy can be restricted to the range between and + eV, where is the chemical potential.…”

supporting

confidence: 83%

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Zhang

Yan

et al. 2016

ACS Nano

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As model Dirac materials, graphene 1,2 and topological insulators, 3,4 have attracted vast attention due to their unique physical properties. Graphene based van der Waals heterojunctions, formed by stacking graphene with other materials, have been a prosperous avenue of research, which exhibit many interesting physical phenomena, including Coulomb drag of massless fermions, 5 metal-insulator transitions 6 and enhancement of spin-orbit coupling. 7 The transport of Dirac fermions through potential barriers in graphene has been revealed to demonstrate the well-known Klein tunneling. [8][9][10] Meanwhile, grapheme-based vertical devices have shown promising properties for Schottky diode and tunneling junction applications. [11][12][13][14][15][16][17][18][19] Through tuning the tunneling barrier, a high on-off conductance ratio in graphene field-effect tunneling transistors has been achieved. 11 Another type of Dirac material, bismuth selenide (Bi 2 Se 3 ), known as a prototype topological insulator, possesses conducting surface states (SS) protected by the time-reversal symmetry. [3][4] Recently, theories have predicted significant modification of energy band structures induced by a proximity effect in graphene-topological insulator hybrid systems. [20][21][22][23] However, although the graphene-Bi 2 Se 3 heterojunctions have been fabricated by vapor-phase deposition 24 and molecular beam epitaxy, 25,26 the vertical electronic transport properties in such heterostructures remain unstudied.For Bi 2 Se 3 grown on graphene, it is difficult to fabricate multi-terminal electrodes separately on graphene and Bi 2 Se 3 to form the vertical transport devices. Fortunately, layer-by-layer stacking of graphene has been demonstrated to be an effective method to construct graphene-based vertical devices. 27 Here we report on the fabrication of 4 the graphene-Bi 2 Se 3 vertical devices using layer-by-layer stacking of graphene and RESULTS AND DISCUSSIONDevice Configurations. The hybrid devices were fabricated by transferring high quality Bi 2 Se 3 nanoplates onto monolayer graphene flakes, followed by the deposition of patterned Cr/Au (50/170 nm) electrodes ( Figure S1). As shown in Figure 1a, the applied bias current I flows from the bottom graphene (Electrode 1) to the upper Raman spectrum in Figure 2e excited by a 514 nm laser clearly indicates the nature of monolayer graphene, as the 2D peak to G peak intensity ratio is larger than 3 : 1.The Raman spectrum of a Bi 2 Se 3 nanoplate is shown in Figure 2f. The pronounced two peaks located at ~131 cm -1 and ~174 cm -1 are assigned to 2 and 1 2 phonon vibrational modes, respectively, which is consistent with the former report. 31Transport through the Graphene-Bi 2 Se 3 Interface. The Cr/Au electrodes form ohmic contacts with both Bi 2 Se 3 and graphene; however there is a potential barrier at the graphene/Bi 2 Se 3 interface ( Figure S2). Figure 3a shows the junction resistance R j increases with decreasing temperature, while the graphene resistance R g shows a very weak tem...

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confidence: 83%

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Zhang

Yan

et al. 2016

ACS Nano

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“…5 and the vs. n dependence of hBN using graphite and gold electrodes [24]. These data indicate that the R c value is largely determined by the interlayer hBN thickness.…”

Section: Andmentioning

confidence: 72%

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

et al. 2014

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Abstract:We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

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“…The EBD obtained in this study is in agreement with that reported previously for thin BN. 15 It is interesting that EBD for BN decreases with increasing the thickness. The similar behavior is also observed for SiO2.…”

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confidence: 99%

“…10 Therefore, BN is considered to be an ideal insulator for layered channel materials. Several studies of the optical, 11 mechanical, 12 phonon, 13 electrical tunneling, 14,15 oxidation resistance, 16 and hydrophobic 17 properties of BN have also been reported.…”

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confidence: 99%

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

Hattori

Taniguchi²,

Watanabe³

et al. 2014

ACS Nano

200

218

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Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ~12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. Based on these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.

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Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Cited by 788 publications

References 20 publications

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

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