Applications of Electroactive Polymers 1993
DOI: 10.1007/978-94-011-1568-1_10
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Electroactive polymers in chemical sensors

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Cited by 55 publications
(3 citation statements)
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“…Therefore a comparison of the voltammetric responses of PANI in solutions containing different ions became the starting point of our study. We have been interested in using these materials as sensing layers for gases (i.e., in dry state) . Moreover, it is desirable to prepare dry PANI sensing layers with different stable redox states.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore a comparison of the voltammetric responses of PANI in solutions containing different ions became the starting point of our study. We have been interested in using these materials as sensing layers for gases (i.e., in dry state) . Moreover, it is desirable to prepare dry PANI sensing layers with different stable redox states.…”
Section: Introductionmentioning
confidence: 99%
“…The unresponsive nature of PMMA-coated SPR chips to 4% ammonia confirms that in order to achieve low-ppm detection limits, physical swelling of a polymer without some form of polymer-analyte affinity cannot be relied upon as the sole phenomenon responsible for SPR shifts. Application of PAni-based coatings (polymer coating 2) to ammonia gas sensing have been extensively discussed in the literature [38][39][40]. In particular, the conducting emeraldine salt form of PAni has attractive electrical properties that display a sensitivity towards redox-active doping species (e.g.…”
Section: Resultsmentioning
confidence: 99%
“…It is important in defining the “ON/OFF” ratio, which is often used as the figure of merit in the description of OFET. Threshold voltage is also important in ChemFETs because the chemical modulation of the WF of the OS causes the shift of V T . ,, Equations 1 describe the well-known transistor characteristics of classical Si-based IGFET. It is therefore not surprising that any deviation from the shape of these ideal characteristics is the first indication of a potential problem in devices that depend on analogous semiconductor field-effect in OS.…”
Section: Introductionmentioning
confidence: 99%