10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

Abstract

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium-and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. The objective of this research is to push the boundaries of high-density, high-speed, 10 kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference (EMI) issues associated with high-speed, 10 kV devices. The high-speed switching and high voltage rating of these devices causes significant EMI and high electric field. Existing power module packages are unable to address these challenges, resulting in detrimental EMI and partial discharge that limit the converter operation. This paper presents the design and testing of a 10 kV SiC MOSFET power module that switches at a record 250 V/ns without compromising the signal and ground integrity due to an integrated screen reduces the common-mode current by ten times. This screen connection simultaneously increases the partial discharge inception voltage by more than 50 %. With the integrated cooling system, the power module prototype achieves a power density of 4 W/mm 3 . 1

The Common Mode Voltage Control Using a Hybrid Compensation Structure and Derivative Method

“…6(a) shows common-mode interference on the output side of the three-phase inverter with an amplitude of approximately 16.67V. Accompanied by high-frequency interference, it conforms to the common mode calculation formula (6). In Fig.…”

“…According to the definition and Eqn. ( 5), uNO is the common-mode voltage, and can be showed in (6) :…”

“…[5] Christina M. DiMarino, Dushan Boroyevich proposed an integrated screen increasing the partial discharge inception voltage to reduce the common-mode current by ten times. [6,7] Bingyao Sun, Hemant Bishnoi et al use EMI behavioral models to predict the common mode emissions in the conducted EMI range (150 kHz-30MHz). [8,9] In paper [10], the proposed control algorithm based on various PM scenarios in terms of injection low and high active power and suitability of energy sources are tested under balanced and unbalanced conditions.…”

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module

“…To reduce the EMI generated by this high-speed switching, a CM current screen that is fully integrated into the power module is proposed in this work. The proposed screen can reduce the ground current by 10 times [77]. This screening layer simultaneously increases the PDIV of the power module by 53 % [77].…”

“…The proposed screen can reduce the ground current by 10 times [77]. This screening layer simultaneously increases the PDIV of the power module by 53 % [77]. To maintain low electric field strength in the air surrounding the power module, while also minimizing size and inductance, a unique housing and bus bar interfacing scheme is proposed.…”