10 GHz-10 W Internally Matched Flip-Chip GaAs Power FETS

Kobiki, M.; Wataze, M.; Segawa, K.; Otsubo, Masahisa; Nakatani, Masanori; Ishii, Takashi

doi:10.1109/mwsym.1980.1124158

Cited by 2 publications

(2 citation statements)

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“…The internal matching circuits, in order to reduce to the package size, are designed based on an empirical configuration (Okamoto et al, 2005;Mitsui et al, 1980). The output matching circuit consists of a T-type pre-matching network with two series inductances and a shunt capacitance.…”

Section: Circuit Designmentioning

confidence: 99%

“…To solve such matching limitations and exhibit the basic device capabilities, the so-called internal matching networks (IMN) close to active device on the carrier or package is a good method. In the design of this kind of solid state power amplifiers packaged in a small size, however, the conventional impedance matching networks (Okamoto et al, 2005;Mitsui et al, 1980) have chosen to be designed at the centre frequency of the design band. This design method provides a serious problem when applied to the design of wideband high power amplifiers.…”

Section: Introductionmentioning

confidence: 99%

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Ku‐band high power internally matched GaN HEMTs with 1.5 GHz bandwidth

Qin

Liu

Chen

et al. 2013

Microelectronics International

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Purpose -The purpose of this paper is to report upon high power, internally matched GaN high electron mobility transistors (HEMTs) at Ku band with 1.5 GHz bandwidth, which employ a simple and cost-effective lossless compensated matching technique. Design/methodology/approach -Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi-section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power of the circuit, while the input matching network is designed at the upper frequency for a flat gain. Findings -With the reactively compensated matching technique, the internally matched GaN HEMTs exhibit a flat saturated output power of 43.2 þ 0.7 dBm and an average power added efficiency of 15 per cent over 12 to 13.5 GHz. Originality/value -This paper provides useful information for the internally matched GaN HEMTs.

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Section: Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%