10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Ackert, Jason J.; Karar, Abdullah S.; Paez, D. J.; Jessop, P. E.; Cartledge, J.C.; Knights, Andrew P.

doi:10.1364/oe.21.019530

Cited by 41 publications

(37 citation statements)

References 10 publications

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“…The absolute values of responsivity are modest, as one would expect for such large waveguides (4.7μm height, 3.5μm width and 3.1μm slab height), with the results being consistent with those reported by Doylend et al [29]. These results are in fact extremely encouraging and suggest that small cross-section detectors (currently being designed by the authors) should provide responsivities >1A/W, and bandwidths of 10Gbps when operated in the avalanche regime [27]. The trend for responsivity as a function of implantation dose for these types of detectors is dominated by a trade-off between increasing absorption with increasing dose (and defect concentration), and a degradation in diode electrical characteristics as the dose is increased (a result of carrier recombination).…”

Section: Photodetectionsupporting

confidence: 84%

“…Even with this decrease in sensitivity, there is a significant attraction for using these types of detectors in optical links using extended wavelengths. Indeed, in light of the recent demonstration of avalanche detection for a wavelength of 1.55μm [27], we may reasonably expect a DC responsivity >1A/W for the 2-2.5μm range for a device with an optimised geometry and bias.…”

Section: Photodetectionmentioning

confidence: 99%

“…High speed operation of these photodetectors is not expected due to the large waveguides used. Scaling this type of device to sub-micrometer size waveguides can yield speeds of 10Gbps as shown in [27].…”

Section: Photodetectionmentioning

confidence: 99%

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Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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Abstract:Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon.

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Section: Photodetectionsupporting

confidence: 84%

Section: Photodetectionmentioning

confidence: 99%

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Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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“…Although many of these ion implanted PDs have demonstrated improved performance when operating in the avalanche regime [8,27], we did not see any indication of improved performance with higher biases on these or in our previous work with Si + -implanted PDs [12]. The lack of clear avalanche multiplication is believed to be due to the device structure and implantation, as there was significant overlap in the doped "wings" of the device and the implantation region.…”

Section: Discussioncontrasting

confidence: 66%

Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

Souhan

Chen

et al. 2016

Photonics

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Abstract:Complementary metal-oxide-semiconductor (CMOS)-compatible Ar + -implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%-3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350˝C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si + -implanted devices and achieve higher responsivity after annealing up to 350˝C.

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“…This is the highest demonstrated bit rate for an integrated detector in the 1.81-2.04 µm gain window of this optical amplifier, and was accomplished with a silicon waveguide utilizing defect-mediated absorption, which extends the cutoff wavelength beyond the intrinsic value of 1.1 µm via deep levels. Such detectors have been explored at wavelengths around 1.55 µm, with devices showing high responsivity at 10 Gbit s -1 when operated in the avalanche mode 15,16 . Due to the relatively weak interaction of sub-bandgap light with lattice defects, the detectors require absorption regions on the order of hundreds of micrometres in length.…”

mentioning

confidence: 99%

High-speed detection at two micrometres with monolithic silicon photodiodes

et al. 2015

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With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a 'capacity crunch' 1 . A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollowcore photonic-bandgap fibres 2,3 and the recently available thulium-doped fibre amplifiers 4 . To date, photodetector devices for this window have largely relied on III-V materials 5 or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility 6-9 . Here, we describe a silicon photodiode operating at 20 Gbit s -1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.The advantages of silicon photonics, which have been well documented for traditional communication wavelengths around 1.3 and 1.5 µm (refs 8,9), extend to operation in the mid-infrared (MIR) region 10 . Silicon photonic components are fabricated using complementary metal-oxide semiconductor (CMOS)-compatible technologies, with the potential for integration with electronic control. Recently, groups have demonstrated several silicon-based components operating in the MIR wavelength range of 2-20 μm, including low-loss waveguides, couplers, splitters and multiplexers 11 , as well as some with hybrid active functionality 12,13 . However, photodetectors that are compatible with silicon waveguides, are capable of detection beyond 2 μm, and operate at the bandwidths required by future optical communication networks remain elusive. The sig-

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10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Cited by 41 publications

References 10 publications

Optical detection and modulation at 2µm-25µm in silicon

Optical detection and modulation at 2µm-25µm in silicon

Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

High-speed detection at two micrometres with monolithic silicon photodiodes

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