10-35 nanosecond magnetoresistive memories

Ranmuthu, K.T.M.; Ranmuthu, I.W.; Pohm, A.V.; Comstock, C.S.; Hassoun, M.

doi:10.1109/20.104787

Cited by 9 publications

(4 citation statements)

References 3 publications

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“…Anisotropic MRAM was investigated in the late 1980s and early 1990s by Honeywell Inc., NonVolatile Electronics Inc. (NVE, a company based in Eden Prairie, Minnesota that was spun off from Honeywell in 1989 to pursue MRAM technology), and by researchers at Iowa State University [32,33,9,7]. The cell name comes from the fact that the programmable permalloy thin film is shaped to permit only two magnetic polarizations.…”

Section: Anisotropic Mrammentioning

confidence: 99%

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

Cockburn

2004

Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.

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Magnetic tunnel junction magnetoresistive randomaccess memory (MTJ-MRAM) appears to be in an advanced stage of development at several companies, including Motorola Inc., IBM Corporation, Infineon Technologies and Cypress Semiconductor Corp. MRAM has the potential to become a universal memory technology, with the high speed of SRAM, the nonvolatility of flash memory (but with much greater write-erase endurance than flash memory), and with storage densities that could approach those of DRAM. MRAM is embeddable in conventional CMOS processes with as few as four additional masks. We briefly review early MRAM technologies such as anisotropic MRAM, spin valve MRAM, and pseudo spin valve MRAM. Then we survey both conventional MTJ-MRAM and the recentlydeveloped read-before-write toggle-mode MTJ-MRAM.

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Section: Anisotropic Mrammentioning

confidence: 99%

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

Cockburn

2004

Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.

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“…Fast memories are more expensive than the slow ones as shown by the "Cost vs Access time Relation of Memory Technologies" in Figure 1.9 [5]. It has been shown that the MRAMs can achieve speeds as high as 35 ns with a density of 256 Kbits/cm^ [12]. With GMR bits, the density is expected to increase by 50% for the same speed.…”

Section: Mram and The Computer Memory Spectrummentioning

confidence: 99%

“…Studies have shown that a write operation can be completed within a few nanoseconds [14]. The speed density trade-off governs the cell size needed to meet a specific read time, and it is possible to achieve access times as low as 10-35 ns (15x25 [im^/bit) [12] or as high as 3 |is with unipolar read (8.5x9.5 mm^/Mbit) [6].…”

Section: Properties Of Mramsmentioning

confidence: 99%

“…This is a remarkable property of MRAM cells which favours high 8 density memories, possibly at the lithographic limit On the other hand, it is possible to increase the output signal by increasing the cell aspect ratio, in order to design faster memories at lower densities. It has been shown that it is possible to design MRAMs with access time in the range of 10-35 ns at a bit density of 0.25 Mbits/cm^ [13]. …”

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confidence: 99%

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A low-noise small signal sensing scheme in voltage mode for high density magnetoresistive memories

Ranmuthu

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Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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Spintronics (or spin electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e., its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by nonmagnetic layers through which the spin-polarized electrons are transmitted. It is considered that spintronics started in 1988 with the discovery of the giant magnetoresistance (GMR) effect, which corresponds to a large variation of the resistance of a magnetic multilayer under the application of a magnetic field [1]. Shortly later, spin valve structures were invented [2]. The latter exhibit GMR at low fields and thereby constitute very sensitive magnetic field sensors. In 1998, they were introduced as sensing elements in readback heads in computer disk drives. More than one billion of such read heads are produced each year. Besides the usual applications of hard disk drives in desktops,

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10-35 nanosecond magnetoresistive memories

Cited by 9 publications

References 3 publications

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

Tutorial on magnetic tunnel junction magnetoresistive random-access memory

A low-noise small signal sensing scheme in voltage mode for high density magnetoresistive memories

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

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