1 µm MOSFET VLSI technology: Part VIII—Radiation effects

Aitken, J.

doi:10.1109/t-ed.1979.19437

Cited by 44 publications

(20 citation statements)

References 9 publications

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“…As evidenced by the reversal of current gain degradation demonstrated in this study, a significant amount of radiation-induced damage can be negated by the subsequent application of hot-carrier stress. Two defects widely studied in the radiation effects of Si-SiOz structures which are relevant to this transpiration are: (i) trapped holes in the bulk of the oxide[28-30], which are commonly associated with E' centers[31-341, a term used to describe unpaired electrons trapped on Si sp3 orbitals projecting into 0 vacancies, and (ii) neutral electron trapping sites [35][36][37][38], also located in the oxide bulk, which are thought to be formed principally through the rupture of strained bonds in the creation of electron-hole pairs.…”

Section: Discussionmentioning

confidence: 99%

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

Witczak

Kosier

Schrimpf

et al. 1994

IEEE Trans. Nucl. Sci.

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The combined effects of ionizing radiation and hotcarrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The results imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation.

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Section: Discussionmentioning

confidence: 99%

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

Witczak

Kosier

Schrimpf

et al. 1994

IEEE Trans. Nucl. Sci.

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“…are required to remove both the positive and neutral traps generated by ionizing radiation from the oxide layers (8).…”

Section: Typical Values Of the Ion Beam Parameters Have Been Selectedmentioning

confidence: 99%

“…respectively, on a semi-infinite substrate with the ion fluence and average ion energy entering each film indicated.VoL 127, No 8. …”

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confidence: 99%

Radiation Damage Estimates and Control in Ion‐Beam Lithography

Galloway

1980

J. Electrochem. Soc.

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“…The ultimate resolution and control of the beam that can be achieved [9], mean that the diffraction limit which restricts device dimensions to ^ 1 jum with conventional photolithography can be overcome so that devices of submicron dimensions are not only feasible but are likely to be commonplace very soon. A possible side effect of electron lithography, however, is the inadvertent radiation damage of devices [10], particularly the gate oxide, usually silicon dioxide, in MOS structures. A great deal of interest has been shown over many years in the effects of high energy radiation on electronic devices [11] but it is only comparatively recently that the effects of low to medium energy electrons on MOS devices have been investigated [12,13,14].…”

Section: Introductionmentioning

confidence: 99%

“…This immediately poses a problem in devices with aluminium metallurgy since these cannot be heated above ~ 55O°C because the aluminium alloys with the silicon. Recently, it has been shown [19] that RF annealing at low temperatures may be an alternative solution to the use of poly silicon or metal silicide conductors [10] which can be annealed at higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

Electron-beam-induced conductivity and related processes in insulating films

Taylor¹

1981

IEE Proc. A Phys. Sci. Meas. Instrum. Manage. Educ. Rev. UK

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The theoretical model for electron-beam-induced conductivity in thin insulating films is reviewed and its application to gain measurements in several different insulating materials is discussed. The ideas incorporated in the model suggest a technique for investigating trapping levels in insulators, using the electron beam as a means of populating the traps. It is suggested that, in addition to determining the trap eneigy, it may be possible to investigate the spatial distribution of the traps. Electron-beam-radiation effects in SiO 2 are briefly commented upon and the dependence of A Vp^, the shift in flat-band voltage of MOS capacitors, on beam energy is discussed in terms of the gain model. Finally consideration is given to the problem of observing voltage contrast from the passivated devices in a scanning electron microscope.

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1 µm MOSFET VLSI technology: Part VIII—Radiation effects

Cited by 44 publications

References 9 publications

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

Radiation Damage Estimates and Control in Ion‐Beam Lithography

Electron-beam-induced conductivity and related processes in insulating films

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