1995
DOI: 10.1109/4.400426
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1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS

Abstract: Abstruct-1-V power supply high-speed low-power digital circuit technology with 0.5-pm multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both lowthreshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed Performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7… Show more

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Cited by 911 publications
(393 citation statements)
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“…As shown in [12], the gate delay is influenced by the ST insertion. The load dependent delay d w/o (v) of gate v without ST is given by:…”
Section: Delay Modelmentioning
confidence: 99%
“…As shown in [12], the gate delay is influenced by the ST insertion. The load dependent delay d w/o (v) of gate v without ST is given by:…”
Section: Delay Modelmentioning
confidence: 99%
“…The leakage current of a cutoff high-transistor is orders of magnitude lower as compared to a low-transistor [5], [6]. Assuming a subthreshold slope of 85 mV/decade (a typical number in current CMOS technologies [15], [16]), an 85 mV increase in the threshold voltage of a transistor reduces the subthreshold leakage current by ten times.…”
Section: Dual Threshold Voltage Domino Logicmentioning
confidence: 99%
“…A number of solutions have been proposed for reducing the leakage power dissipation of digital circuits which include the use of dual-threshold logic [2], application of reverse body bias [3] and power gating [4]. Power gating is proven to be the most effective and practical technique for reducing leakage power when logic is idle.…”
Section: Introductionmentioning
confidence: 99%