1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance Microscopy

Zhang, Li; Tanimoto, Hiroki; Adachi, K.; Nishiyama, Akira

doi:10.1109/led.2008.2000644

Cited by 41 publications

(22 citation statements)

References 9 publications

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“…This is because physical analysis of lateral carrier (dopant) profiles is relatively more difficult than that of vertical profiles by using SIMS, SR and so on. Direct evaluation techniques of the 2-D carrier profile in the scaled FET [48][49][50][51] will help us to further optimize the lateral junction profile efficiently. Figure 6 shows an example of the cross-sectional image of the carrier profile of the transistors with the gate-to-gate pitch of 45 nm CMOS platform.…”

Section: Mobility Enhancementmentioning

confidence: 99%

Advanced technologies for enhancing drive current of high-density transistors

Fukutome¹,

Momiyama²

2009

2009 International Workshop on Junction Technology

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We review the advanced technologies available for enhancing drive current of the high-density planar FETs. From the theoretical expression of the saturation current of the FET, the technologies are categorized into four groups; (1) scaling inversion gate dielectric thickness, (2) mobility enhancement, (3) steep lateral profile of the source/drain extension, and (4) reduction of parasitic resistance. Feasibility of various techniques for each group is comprehensively discussed.(4) Ext.

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Section: Mobility Enhancementmentioning

confidence: 99%

Advanced technologies for enhancing drive current of high-density transistors

Fukutome¹,

Momiyama²

2009

2009 International Workshop on Junction Technology

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“…Zhang, et. al [2] has demonstrated that the minimum spatial resolution of SSRM is 1 nm order on the conventional CMOS transistor with gate length of around 60 nm by measuring around ultrashallow source/drain extension (SDE) junctions. On the other hand, a quantitative accuracy issue is remained in SSRM technology.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, it is difficult to measure the SSRM resistance in the advanced device for the reason that the current path in the device is not necessarily uniform in the measurement. The precondition of SSRM equation, equation (2) may not comprise by a case. The size of the probe tip and the device element is comparable for the advanced device.…”

Section: Introductionmentioning

confidence: 99%

Carrier Profiling Technology in Ten Nanometers Devices

Hirota

Harada

Nakai

et al. 2015

IEEE Trans. Semicond. Manufact.

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The advanced carrier concentration evaluation scheme was proposed with combined higher precise scanning spreading resistance microscopy (SSRM) measurement and technology -CAD (TCAD) analysis in this study. The cyclic contact (CC) method was applied to variation reduction of SSRM resistance to more accurately characterize for the device. The CC method suppresses dust generation. The variation of resistance with the CC method decreased drastically less than 10 %. SSRM resistances were corrected to obtain the potential drop in the probe and other resistance component in the measurement system using TCAD analyses. The effective contact probe tip radius was derived from TCAD analysis. The optimization of both sample and measurement conditions were obtained before the actual measurement. The electrical phenomenon in the device measurement can be known by the TCAD analysis. The SSRM measurement of advanced flash memory was successfully demonstrated with adapted these technologies. This result suggests strongly that 10 nm order size device can be measured by using SSRM with the CC method.Index Terms-Atomic force microscopy (AFM), Carrier profile, Cyclic contact (CC) method, Flash memory, Scanning spreading resistance microscopy (SSRM), Technology-CAD (TCAD)

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“…Most prominent applications of the SSRM technique are process characterisation [9][10][11] and device simulator matching [12]. There is only little literature regarding the application of SSRM for failure analysis [13][14][15].…”

Section: Introductionmentioning

confidence: 99%