1-GHz, 200/spl deg/C, SiC MESFET Clapp oscillator

Schwartz, Z.D.; Ponchak, George E.

doi:10.1109/lmwc.2005.858995

Cited by 24 publications

(12 citation statements)

References 10 publications

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“…Possible substrates for this application are alumina and Sapphire. For example, a 200˚ C, 1 GHz oscillator [8] and a 400˚ C, 30 MHz wireless sensor [9] have been demonstrated on an alumina substrate using hybrid integrated circuit technologies. Before these circuits can be optimized, the characteristics of transmission lines fabricated on suitable substrates, such as Sapphire and alumina, must be understood over the temperature and frequency range.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

Ponchak

Jordan

Scardelletti

2009

IEEE Trans. Adv. Packag.

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Section: Introductionmentioning

confidence: 99%

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

Ponchak

Jordan

Scardelletti

2009

IEEE Trans. Adv. Packag.

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“…The RF interfacing, required to characterize HT RF circuits, is relatively simple to realize using SMA connectors as compared to some other alternatives [13]- [15]. These alternatives range from RF probing [13], inductive coupling [14] to employing a chip antenna [15]. Nevertheless, the temperature rating of SMA connectors limit their reliable operation to around 200 • C. To circumvent this issue, LTCC board was designed to extend beyond the chuck boundary (marked by the red lines).…”

Section: A Measurement Setupmentioning

confidence: 99%

A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

Hussain

Elahipanah

Zumbro

et al. 2018

IEEE Electron Device Lett.

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This paper presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 • C. The conversion gain is 15 dB at 25 • C, which decreases to 4.7 dB at 500 • C. The input 1-dB compression point is 1 dBm at 25 • C and-2.5 dBm at 500 • C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 • C.

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“…Figure 2a is a schematic of the Clapp oscillator discussed in [3]. The 1 GHz Clapp oscillator was epoxied and wire bonded to the antenna.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…A GaAs FET was used in an amplifier/oscillator-based active antenna [2]. An oscillator based on a Cree SiC transistor was designed and characterized in [3]. This paper reports the integration of the SiC Clapp oscillator to a slotline loop antenna.…”

Section: Introductionmentioning

confidence: 99%