1 Gbit/s, 32×32 high-speed space-division switching module for broadband ISDN using SST LSIs

The impact of growth temperature on the epitaxial layer structure and the negative differential resistance characteristics of pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes (RTDs) with the high peak current density of 5–10×104 A/cm2 grown by molecular beam epitaxy was studied. For RTDs with a nominally symmetrical structure and with an InAs sub-well layer thinner than an estimated critical thickness, strong asymmetry in current–voltage characteristics was observed at growth temperatures below the critical growth temperature of 410°C, while a slight reverse asymmetry was observed at higher temperatures. Examinations of the RTD structures by transmission electron microscopy and atomic force microscopy indicated that three-dimensional growth of InAs at lower temperatures degrades the top-AlAs barrier structure. These asymmetric characteristics are explained in terms of the barrier structure asymmetry caused by temperature-dependent growth kinetics by using a simplified current density calculation model.

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1 Gbit/s, 32×32 high-speed space-division switching module for broadband ISDN using SST LSIs

Cited by 3 publications

References 2 publications

A 2 Gb/s expandable space-division switching LSI and network architecture for gigabit-rate broad-band circuit switching

A 2 Gb/s expandable space-division switching LSI and network architecture for gigabit-rate broad-band circuit switching

Multichip 1.8-Gb/s high-speed space-division switching module using copper-polyimide multilayer substrate

Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy

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