1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology

Allogo, Y. Akue; Murcia, M. de; Vildeuil, J.C.; Valenza, M.; Llinares, P.; Cottin, D.

doi:10.1016/s0038-1101(01)00109-5

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…As reported in the BSIM3 noise model [14], [33], with a small V ds , the measured noise in the linear region can be approximated by following Hooge's theory [34], [35]…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Liu

Cai

Han

et al. 2019

IEEE J. Electron Devices Soc.

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Scaling down effects on conduction and low frequency noise characteristics are investigated in a set of p-type polycrystalline silicon thin-film transistors (poly-Si TFTs) with fixed channel width (W=8 μm) and different channel lengths (L=2, 4, 8, 12, and 20 μm). First, short channel effects on threshold voltage, field effect mobility, and sub-threshold swing are examined, while the presence of contact may induce to the degradation of field effect mobility in the short channel devices. Subsequently, the drain current noise power spectral densities are measured at varied effective gate voltages and drain currents. The slopes of normalized noise against effective gate voltage are varied from −1.1 to −2 with decreasing channel length, which indicates that poly-Si TFTs varied from bulk dominated devices to interface dominated devices. Based on N-μ model, the flat-band voltage noise spectral density and coulomb scattering coefficient are extracted. Therefore, measured normalized noises are simulated by considering of contact resistance. Finally, short channel effects on some noise parameters (such as Hooge's parameter, etc.) are studied and discussed.

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“…As reported in the BSIM3 noise model [14], [33], with a small V ds , the measured noise in the linear region can be approximated by following Hooge's theory [34], [35]…”

Section: Low Frequency Noise Characteristicsmentioning

confidence: 99%

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Liu

Cai

Han

et al. 2019

IEEE J. Electron Devices Soc.

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“…Firstly the normalized Sy for TN transistors scales with approximately 1/L g ( m j n ) 3 at 1Hz in saturation. This trend agrees with other published data [1], [2], [88], [92], [102] although their comparisons have been done at low drain bias and constant V ds . These authors explained the 1/L 3 dependence by using the drain current noise spectral density of the correlated mobility fluctuation model [2]:…”

Section: Device Fabrication and 1/f Noise Characterizationsupporting

confidence: 93%

Flicker noise fluctuations in deep submicron MOSFETs

Chew¹

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This thesis investigates the effects of technology scaling on the flicker (or \lf) noise performance of deep submicron complementary metal-oxide-semiconductor (CMOS) transistors. Two major effects have been investigated, namely the employment of different gate dielectric growth and subsequent nitridation conditions, and the effects of geometry scaling. The first part of this work focus on the study of these two effects within the 0.25p.m technology node. Subsequently the scope of this study has been widened to examine the effects of scaling across a spectrum of technology nodes, namely 0.35um, 0.25um, 0.18pm and 0.13um. Finally the scope is further extended to cover the offering of different process flavours, as well as geometry scaling for the 0.13pm technology node. The 1//"noise performance of 0.25pm thin gate oxide transistors from the dual gate oxide thickness process and the single gate oxide thickness process have been evaluated and compared. A total of 20 transistors have been characterized. The results reveal that thin gate oxide transistors from the dual gate oxide thickness process show a maximum of an order reduction in the current noise spectra, as compared to their counterparts from the single gate oxide thickness process. This reduction can be attributed to the lower nitrogen concentration peak at the Si/SiC>2 interface. This lower nitrogen peak in turn correlates to a reduced oxide trap density at the interface, which has been verified via the chargepumping technique. Hence the dual gate oxide thickness process will be the state-of-theart for the implementation of low noise circuit designs. In general, the low frequency noise behaviour of the fabricated deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) is best described by the correlated mobility fluctuation model.

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1/F Noise in Mosfets

Haartman

Östling

2007

Low-Frequency Noise in Advanced Mos Devices

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1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology

Cited by 11 publications

References 9 publications

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Scaling Down Effect on Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors

Flicker noise fluctuations in deep submicron MOSFETs

1/F Noise in Mosfets

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