1/F Noise in Mos Inversion Layers

Hayat, S.; Jones, Brian K.

doi:10.1016/b978-0-444-86992-0.50101-6

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…where A and B are independent of V , -V , since the channel resistance, R , varies as N" and N varies as V,-V,. Since this noise variation with V G -V , is not found for data for very large V , -V , we conclude that the parasitic resistance has negligible noise, contrary to what was reported earlier (Hayat and Jones 1986).…”

Section: =Cox(vc-vt)f(s'iv')(pi/~)'iecontrasting

confidence: 99%

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1/f noise in Ohmic MOS inversion layers

Hayat

Jones

Russell

1988

Semicond. Sci. Technol.

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Measurements have been made of the llf noise in MOS enhancement and depletion devices in strong inversion, biased in the Ohmic region between 77 and 360 K. Measurements of the DC characteristics have enabled the results to be related to a clear model of the device operation. The data do not fit mobility or quantum llfnoise models. Good agreement is found with a number fluctuation model if the noise is assumed to be produced by two types of trapping process.

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Section: =Cox(vc-vt)f(s'iv')(pi/~)'iecontrasting

confidence: 99%

“…The device characteristics were measured using various types of computer-controlled apparatus (Hayat 1986). The DC conductance, G = R" = ZD/VD, and the AC mutual conductance, g,, were measured as a function of VG with fixed values of VB (0 V and i 10 V) and T (77, 130, 298 and 360 K).…”

Section: Characteristicsmentioning

confidence: 99%

1/f noise in Ohmic MOS inversion layers

Hayat

Jones

Russell

1988

Semicond. Sci. Technol.

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“…This agrees with the data shown in Table 5.2. A considerable dependence of CCH on the gate bias and oxide thickness has been observed by other researchers [94], [95], which contradicts Hooge's theory. Hence in order to account for the discrepancy between the expected and measured values of OCH, Hooge and Vandamme proposed that only phonon scattering contributes to flicker noise, while other types of scattering suppress the flicker noise at low frequencies [87].…”

Section: Resultsmentioning

confidence: 67%

Flicker noise fluctuations in deep submicron MOSFETs

Chew¹

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This thesis investigates the effects of technology scaling on the flicker (or \lf) noise performance of deep submicron complementary metal-oxide-semiconductor (CMOS) transistors. Two major effects have been investigated, namely the employment of different gate dielectric growth and subsequent nitridation conditions, and the effects of geometry scaling. The first part of this work focus on the study of these two effects within the 0.25p.m technology node. Subsequently the scope of this study has been widened to examine the effects of scaling across a spectrum of technology nodes, namely 0.35um, 0.25um, 0.18pm and 0.13um. Finally the scope is further extended to cover the offering of different process flavours, as well as geometry scaling for the 0.13pm technology node. The 1//"noise performance of 0.25pm thin gate oxide transistors from the dual gate oxide thickness process and the single gate oxide thickness process have been evaluated and compared. A total of 20 transistors have been characterized. The results reveal that thin gate oxide transistors from the dual gate oxide thickness process show a maximum of an order reduction in the current noise spectra, as compared to their counterparts from the single gate oxide thickness process. This reduction can be attributed to the lower nitrogen concentration peak at the Si/SiC>2 interface. This lower nitrogen peak in turn correlates to a reduced oxide trap density at the interface, which has been verified via the chargepumping technique. Hence the dual gate oxide thickness process will be the state-of-theart for the implementation of low noise circuit designs. In general, the low frequency noise behaviour of the fabricated deep submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) is best described by the correlated mobility fluctuation model.

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Extended burgess' variance theorem: Derivation without small signal approach and applicability to 1/f noise in photodiodes

Kimmerle¹,

Marten

1986

Physica B+C

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1/F Noise in Mos Inversion Layers

Cited by 5 publications

References 7 publications

1/f noise in Ohmic MOS inversion layers

1/f noise in Ohmic MOS inversion layers

Flicker noise fluctuations in deep submicron MOSFETs

Extended burgess' variance theorem: Derivation without small signal approach and applicability to 1/f noise in photodiodes

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