1/f noise in Ohmic MOS inversion layers

Abstract

Measurements have been made of the llf noise in MOS enhancement and depletion devices in strong inversion, biased in the Ohmic region between 77 and 360 K. Measurements of the DC characteristics have enabled the results to be related to a clear model of the device operation. The data do not fit mobility or quantum llfnoise models. Good agreement is found with a number fluctuation model if the noise is assumed to be produced by two types of trapping process.