1/f noise and radiation effects in MOS devices

Fleetwood, D. M.; Meisenheimer, T.L.; Scofield, John

doi:10.1109/16.333811

Cited by 174 publications

(104 citation statements)

References 104 publications

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“…The flicker 1/f noise in semiconductors and metals is usually associated with structural defects. Therefore, introduction of defects by electron, ion, gamma or X-ray irradiation normally results in increased levels of 1/f noise [2,[18][19][20]. However, as an exception to the rule, there have been a few reports when the 1/f noise decreased as a result of irradiation [24][25].…”

mentioning

confidence: 99%

“…The latter provided a strong motivation for the present study. The irradiation experiments were crucial for gaining understanding 1/f noise in conventional materials and metal-oxide-semiconductor field-effect transistors [18][19][20]. Investigation of the effects produced by the electron beams on 1/f noise in graphene can elucidate the mechanisms of 1/f noise and answer a question of graphene's prospects for radiation-hard applications.…”

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confidence: 99%

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Reduction of 1/f noise in graphene after electron-beam irradiation

Hossain

Rumyantsev

Shur

et al. 2013

Applied Physics Letters

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We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with microRaman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 10 4 C/cm 2 . Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors.Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 3The level of the flicker 1/f noise [1] is one of the key metrics that each new material has to pass before it can be used for practical devices (f is the frequency) [2]. Graphene [3] has shown a great potential for applications in high-frequency communications [4][5], analog circuits [6] and sensors [7][8]. The envisioned applications require a low level of 1/f noise, which contributes to the phase-noise of communication systems [2] and limits the sensor sensitivity [7]. Despite significant research efforts [9][10][11][12][13][14][15] there is still no conventionally accepted model for physical mechanisms behind 1/f noise in graphene. Correspondingly, no comprehensive methods for 1/f noise suppression in graphene devices have been developed.In this Letter we show that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. We found that bombardment of graphene devices with 20-keV electrons can reduce the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose (RD) of 10 4 C/cm 2 . Our theoretical analysis suggests that the observed noise suppression after introduction of defects can be explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations rather than to the carrier-density fluctuations. Apart from contributing to understanding the physics behind 1/f noise in graphene our results can possibly offer a practical method for noise reduction in various graphene devices. Graphene is relatively susceptible to the electron and ion bombardment owing to its single-atom thickness [21][22][23]. Electron irradiation can introduce different types of defects in graphene Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 5 depending on the beam energy and local environment, e.g. presence of organic contaminants. For this study we selected the electron energy of 20 keV in order to exclude the severe knock-on damage to ...

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confidence: 99%

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confidence: 99%

Reduction of 1/f noise in graphene after electron-beam irradiation

Hossain

Rumyantsev

Shur

et al. 2013

Applied Physics Letters

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“…It is also reported in the works of Fleetwood and Scofield (1990) and Fleetwood et al, (1994) that TID effects increase the 1/f noise in MOS devices, as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 79%

Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

Both

Colombo

Dallasen

et al. 2013

J.Aerosp. Technol. Manag.

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“…However, in the case of strained-Si on Si 1−x Ge x , Ge diffusion to the Si/ HfO 2 interface may result in an increase in the interface state and fixed-charge densities for these devices [6]. Furthermore, the presence of border traps [7], which can exchange charge with Si on a time-scale ∼1 s, can increase 1/f noise as reported in the study in [8]. The evaluation of border traps and interface traps is, thus, a critical reliability concern in the case of high-κ/Si or high-κ/strained-Si MOSFET devices.…”

Section: Introductionmentioning

confidence: 79%

Border-Trap Characterization in High-$\kappa$ Strained-Si MOSFETs

Maji

Duttagupta

Rao

et al. 2007

IEEE Electron Device Lett.

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Abstract-In this letter, we focus on the border-trap characterization of TaN/HfO 2 /Si and TaN/HfO 2 /strained-Si/Si 0.8 Ge 0.2 n-channel MOSFET devices. The equivalent oxide thickness for the gate dielectrics is 2 nm. Drain-current hysteresis method is used to characterize the border traps, and it is found that border traps are higher in the case of high-κ films on strainedSi/Si 0.8 Ge 0.2 . These results are also verified by the 1/f-noise measurements. Possible reasons for the degraded interface quality of high-κ films on strained-Si are also proposed.

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1/f noise and radiation effects in MOS devices

Cited by 174 publications

References 104 publications

Reduction of 1/f noise in graphene after electron-beam irradiation

Reduction of 1/f noise in graphene after electron-beam irradiation

Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

Border-Trap Characterization in High-$\kappa$ Strained-Si MOSFETs

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