1.32-μm GaInNAs-GaAs laser with a low threshold current density

Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

“…[1][2][3][4][5][6][7][8][9][10][11][12] Less temperature sensitivity in InGaAsN QW lasers, at ϭ1300 nm, has also been demonstrated in many of the published results. [1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued.…”

“…To the best of our knowledge, these data represent the lowest threshold-and transparencycurrent densities reported for InGaAsN QW lasers in the wavelength regime of 1.28 -1.32 m as shown in Table I. [1][2][3][4][5][6][7][8][9][10][11][12] The external differential quantum efficiency ( d ) of the InGaAsN QW lasers, as shown in Fig. 3, is as high as 57% for devices with cavity lengths of 720 m. The lower d for the longer cavity devices is attributed to the relatively large internal loss (␣ i ϭ13 cm 1 ) for these unoptimized structures.…”

“…Only recently, MOCVD-grown InGaAsN QW lasers, [3][4][5][6][7] at ϭ1300 nm, have demonstrated comparable performances with the MBEgrown InGaAsN QW lasers. [8][9][10][11][12] As shown in our earlier studies, 3 tensile-strained buffer layers ͑InGaPϩGaAsP͒ are crucial for achieving highly strained InGaAs͑N͒ QW lasers grown on thick, highAl-content ͑75%-85%͒ AlGaAs lower cladding layers. In the present work, we report very low threshold (J th )-and transparency (J th )-current-density, strain-compensated In 0.4 Ga 0.6 As 0.995 N 0.005 QW lasers with high current injection efficiency ( inj ) by utilizing strain compensation from GaAsP tensile-strained barriers and a thin GaAsP tensilestrained buffer layer.…”

“…[1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued. The advantage of the MOCVD-grown InGaAsN QW lasers is the ease in growing high quality AlAs/GaAs distributed Bragg reflectors by MOCVD, compared to molecular beam epitaxy ͑MBE͒ techniques, for realizing low-cost VCSELs.…”

Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

“…All previous studies of MOCVD-grown InGaAsN QWs have pursued GaAs as the direct barrier material. 1-10 There have been several works investigating the growth of InGaAsN QWs with GaAsN as direct barriers, 4,7,8 which however, is a smaller band gap material system. The utilization of larger band gap barrier materials will potentially lead to the suppression of thermionic carrier leakage, 16 which will in turn lead to a reduction in the temperature sensitivity of the threshold-current density of the lasers, in particular, at hightemperature operation.…”