1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

Thermal simulation of InP-based 1.3μm vertical cavity surface emitting laser with AsSb-based DBRs

“…As it prevents carriers from stimulated recombination, it is the main reason for the power roll-off. AlInAs electron stopper layers (ESL) have been proposed for improved hightemperature performance of AlGaInAs/InP semiconductor lasers [22,23].The AlInAs layer, lattice matched to InP layer, has a large conduction band offset to the AlGaInAs layer, which will suppress the thermionic emission of electrons from the MQW to SCH.…”

Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3μm AlGaInAs∕AlGaInAs strain-compensated multiple-quantum-well laser diodes

“…14-20 Kazarinov and Belenky 14 proposed that with the introduction of an AlInAs electron-stopping layer to the LDs, the thermal leakage could be reduced. Subsequently, Takemasa et al 15 verified this theory experimentally. Irikawa et al 16 and subsequent investigations 17,18 analyzed the effect of AlInAs/ AlGaInAs multiple quantum barriers and showed that these LDs have superior electrical characteristics of lower threshold current density Jth and higher characteristic temperature T 0 than those without multiple quantum barriers.…”

“…21 Our previous work 22 reported that an introduction of n-type modulation-doping barriers to AlGaInAs/ AlGaInAs SC-MQW LDs exhibits better electrical and optical characteristics than laser diodes without n-type modulation-doping barriers. Takemasa et al 15 reported that the 3-m ridge-waveguide LDs with an electron stop layer have a threshold current and a characteristic temperature of 21 mA and 79 K, respectively. Camargo et al 23 reported that the AlGaInAs/ AlGaInAs MQW LDs with the same structure have a threshold current and characteristic temperature of 16.6 mA and 102 K, respectively.…”

1.3-μm-range InGaAs metamorphic laser for low power consumption operation

“…This great improvement is thought to be due to the reduced leakage of electrons into the p-cladding layer. This phenomenon is more conspicuous with this asymmetric n-InGaAlAs/ p-InGaP cladding than with symmetric n-InP/ p-InP cladding [5]. Figure 5 shows the injection current dependence of the relaxation oscillation frequency (f r ).…”