1.3 m GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

Calvez, S.; Clark, A.H.; Hopkins, James F.; Macaluso, Roberto; Merlin, P.; Sun, Handong; Dawson, Martin D.; Jouhti, T.; Pessa, M.

doi:10.1049/el:20030119

Cited by 33 publications

(22 citation statements)

References 5 publications

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“…It is important to note that, in each case, the amplifier must operate under the condition of to avoid exceeding the lasing threshold. Assuming uniform active material over the extent of the signal spot size, the singlepass gain of the VCSOA is calculated using (4) with the combined thickness of the QWs , the average cavity loss , the total cavity length -including the penetration depth into the mirrors-and the gain-enhancement factor . With vertical-cavity devices, standing wave effects must be considered.…”

Section: A Signal Gainmentioning

confidence: 99%

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MEMS-tunable vertical-cavity SOAs

Cole

Bjorlin

Chen

et al. 2005

IEEE J. Quantum Electron.

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Abstract-We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a number of experimental devices. Using general Fabry-Pérot relationships, it is possible to model both the wavelength tuning characteristics and the peak signal gain of tunable vertical-cavity amplifiers, while a rate-equation analysis is used to describe the saturation output power and NF as a function of the VCSOA resonant wavelength. Additionally, the basic design principles for an integrated electrostatic actuator are outlined. It is found that MEMS-tunable VCSOAs follow many of the same design trends as fixed-wavelength devices. However, with tunable devices, the effects of varying mirror reflectance and varying single-pass gain associated with the MEMS-based tuning mechanism lead to changing amplifier properties over the wavelength span of the device.

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Section: A Signal Gainmentioning

confidence: 99%

“…range of fiber amplifiers. In recent years, both optically and electrically pumped long-wavelength VCSOAs have been demonstrated [1]- [4]. The high-finesse Fabry-Pérot (FP) cavity of VCSOAs results in a narrow gain bandwidth.…”

Section: Introductionmentioning

confidence: 99%

MEMS-tunable vertical-cavity SOAs

Cole

Bjorlin

Chen

et al. 2005

IEEE J. Quantum Electron.

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“…Dilute nitrides has provided opportunities for a variety of optoelectronics device applications. Devices already demonstrated include diode lasers (Mitomo et al 2005), photodetectors (Heroux et al 1999), solar cells (Geisz and Friedman 2002), vertical cavity surface emitting laser (Calvez et al 2004a), vertical external-cavity surface emitting lasers (Calvez et al 2004b), semiconductor optical amplifiers (Calvez et al 2003) modulators (Balcioglu Aahrenkiel and Friedman 2000) and heterojuction bipolar transistors (HBTs) (Li et al 2000). A wide range of novel devices could still benefit from dilute nitrides; commercially, the most important devices are for inexpensive optical fiber data transmission at 1,300 nm for metro-area links over 10 to 20 km.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

et al. 2007

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We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1−x In x N y As 1−y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by bandto-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

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“…For instance, diode lasers [1], photodetectors [2], multijunction high efficiency solar cells [3], vertical cavity surface emitting lasers [4], vertical external-cavity surface emitting lasers [5], and semiconductor optical amplifiers [6] are only a few of the devices they used. However, the presence of nitrogen atoms into III-V lattice makes it difficult to obtain high quality materials due to the dissimilarities in atomic radius and electro-negativities between N and replaced atoms of host semiconductor.…”

Section: Introductionmentioning

confidence: 99%