Abstract-We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a number of experimental devices. Using general Fabry-Pérot relationships, it is possible to model both the wavelength tuning characteristics and the peak signal gain of tunable vertical-cavity amplifiers, while a rate-equation analysis is used to describe the saturation output power and NF as a function of the VCSOA resonant wavelength. Additionally, the basic design principles for an integrated electrostatic actuator are outlined. It is found that MEMS-tunable VCSOAs follow many of the same design trends as fixed-wavelength devices. However, with tunable devices, the effects of varying mirror reflectance and varying single-pass gain associated with the MEMS-based tuning mechanism lead to changing amplifier properties over the wavelength span of the device.
This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-m wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in reflection mode. The reflectivity of the VCSOA top mirror was varied in the characterization of the device. Results are presented for 13 and 12 top mirror periods. By reducing the top mirror reflectivity, the amplifier gain, optical bandwidth, and saturation output power were simultaneously improved. For the case of 12 top mirror periods, we demonstrate 13-dB fiber-to-fiber gain, 0.6 nm (100 GHz) optical bandwidth, a saturation output power of 3 5 dBm and a noise figure of 8.3 dB. The switching properties of the VCSOA are also briefly investigated. By modulating the pump laser, we have obtained a 46-dB extinction ratio in the output power, with the maximum output power corresponding to 7-dB fiber-to-fiber gain. All results are for continuous wave operation at room temperature.
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices because of their small form factor, potential low manufacturing cost, high coupling efficiency to optical fiber, and polarization-independent gain. In this paper, we present an overview of the properties of VCSOAs, as well as emerging applications for this new class of devices. We present general design rules and analyze how the mirror reflectivity affects the properties of the VCSOA. Experimental results of carrier-confined, optically pumped VCSOAs operating at 1.3-m wavelength are presented. The devices were fabricated by wafer bonding high-quality AlGaAs distributed Bragg reflectors (DBRs) to an InGaAsP/InP active region. A carrier-confining structure was formed on the active region before the top mirror was bonded to the sample. These VCSOAs show the highest fiber-to-fiber gain (17 dB) and the lowest noise figure (6.1 dB) of any long-wavelength VCSOAs to date. VCSOAs should find applications as low-cost, single-channel amplifiers, amplifying filters, amplifying switches or modulators, as well as in two-dimensional array applications such as optical interconnects. We demonstrate the use of VCSOAs for optical preamplification at 10 Gb/s. Using an 11-dB gain VCSOA, the sensitivity of a regular p-in detector was increased by 7 dB resulting in a receiver sensitivity of 26.2 dBm.
Abstract-We present the first microelectromechanical tunable vertical-cavity semiconductor optical amplifier. The device operates in the long wavelength range and exhibits a minimum of 10 dB of device gain through 11 nm of tuning.
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