1.3 <i>μ</i>m single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

Xue, Yongzhou; Chen, Zesheng; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Bo

doi:10.1063/1.5010049

Cited by 6 publications

(4 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fitting plot shows that I ∞ and P sat are approximately 1.43 × 10 6 counts/s and 343 μW, respectively. The details of the optical collection and detection efficiency of experimental setup are presented in ref .…”

Section: Resultsmentioning

confidence: 99%

Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films

et al. 2021

Self Cite

View full text Add to dashboard Cite

Single-photon emitters (SPEs) are one of the building blocks in quantum information processing. Here, we report detailed experimental optical properties of the SPEs in aluminum nitride (AlN) films at 10 K. The high-quality AlN films are grown by metal–organic chemical vapor deposition on graphene/sapphire substrates, which can conquer the large lattice and thermal mismatches between the sapphire and AlN. We report the defects in AlN with a relatively high Debye–Waller factor up to ∼29% and near-perfect linear polarization SPEs with a saturation count rate of 1.43 × 106 counts/s. The power-dependent second-order autocorrelation measurements are used to study the transition kinetics, which can be described using a three-level model. The polarization measurements of absorption and emission reveal the optical cycle mechanism, where a particular zero-phonon line may be excited via multiple mechanisms. This work provides some insight into the nature of the optical properties and energy-level structures of AlN defects, which pave the way to integrated on-chip quantum photonics.

show abstract

Section: Resultsmentioning

confidence: 99%

Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…At elevated temperatures, carriers escape from the QDs due to finite height of confining potential barriers. It has been proven that single-photon emission can be maintained to temperatures as high as 90 K and 120 K for InP-based emitters in the C-band [ 50 ] and GaAs-based ones in the O-band [ 53 ], respectively. Unfortunately, the coherent properties of emission are relatively quickly lost with increasing temperature.…”

Section: Introductionmentioning

confidence: 99%

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

et al. 2021

View full text Add to dashboard Cite

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

show abstract

“…The second pivotal requirement for practical, solid-state SPS for quantum communication is single-photon emission at significantly elevated temperatures of the emitter to make such quantum devices more compact, practical and cheaper. Reaching room temperature operation with QDs emitting at telecom wavelengths encounters fundamental limits of the quantum localization energy and inter-level spacing with the highest reported temperatures where the single-photon emission at telecom wavelengths is still observable at 120 K 35 . This is out of reach for thermoelectrical cooling, but on the contrary, the Stirling cryocooling can be successfully applied to reach temperatures as low as 27 K 23 , 24 and fulfils the requirements for compact, easy and relatively cheap operation without need for cryogenic liquids.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Holewa

Burakowski

Musiał

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of $${g}_{50K}^{(2)}\left(0\right)=0.13$$ g 50 K ( 2 ) 0 = 0.13 up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance.

show abstract

1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

Cited by 6 publications

References 37 publications

Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films

Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Contact Info

Product

Resources

About