2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2021
DOI: 10.23919/ispsd50666.2021.9452284
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1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation

Jia-Wei Hu
1
,
Jiaxi Jiang
2
,
Pin-Wei Huang
3
et al.
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