1.2: <i>Invited Paper:</i> Dynamic threshold voltage compensation IGZO‐GOA circuit for AMOLED display

Xue, Yan; Han, Bing; Wang, Xian; Zhou, Shuai; Liao, Congwei; Zhang, Shengdong; Chaw, Gary; Lu, Po‐Yen; Wu, Yuan‐Chun

doi:10.1002/sdtp.13366

Cited by 5 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…𝑉 𝐷𝐷,𝑚𝑖𝑛 is determined by max value of ( 5) and ( 6). Meanwhile, for the emitting phase, 𝑉 𝑑𝑠𝑎𝑡,𝑇1 should be equal to or higher than ∆𝑉 𝑑𝑎𝑡𝑎 to keep T1 working in the saturation region in equation (6).…”

Section: Proposed Pixel Circuit and Operationmentioning

confidence: 99%

“…owadays Active-Matrix Organic Light-Emitting-Diode (AMOLED) display has been becoming a strong candidate for the next generation of mainstream display [1]- [3]. Compared to the Active-Matrix Liquid-Crystal Display (AMLCD) which is currently the mainstream display technology, AMOLED display has a higher contrast ratio, faster response, wider viewing angle, and lower power consumption [4]- [6]. Low Temperature Poly-silicon (LTPS) thin-film transistors (TFTs) and amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs have been presently used for the implementations of AMOLED display.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology

Qiu

Wang

et al. 2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

In this paper, an AMOLED pixel circuit based on low-temperature poly-crystalline silicon and oxide (LTPO) thin-film transistors (TFTs) hybrid technology is proposed, which features only two transistors in a serial connection with OLED. The power supply can thus be reduced by 25~30% in the "Always-on-Display" (AOD) mode compared with the earlier LTPO pixel circuits which usually have three transistors in the current path and need a higher supply voltage. Furthermore, in addition to a strong suppressing ability to Vth variations/shift, the proposed pixel circuit has an excellent compensation ability for current-resistance voltage drops (i.e. IR drop), which is also superior to the earlier LTPO ones where the IR drop has to be compensated externally. Therefore, the proposed LTPO pixel circuit is able to provide AMOLED displays with lower power consumption and higher display performance than the earlier ones.

show abstract

Section: Proposed Pixel Circuit and Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology

Qiu

Wang

et al. 2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

show abstract

“…Recently, due to their high mobility, dual-gated TFTs have been widely used in the integrated circuits [ 25 , 26 , 27 , 28 ]. For example, in our previous study, a dual-gated TFT structure that was based on the active-matrix organic light-emitting diode (AMOLED) manufacturing process has been introduced [ 29 ]. The threshold voltage (Vth) can be controlled by changing the voltage at the bottom gate.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

Rong

Lin

et al. 2022

Micromachines

View full text Add to dashboard Cite

In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.

show abstract

Gate Driver Circuit for a 15-inch AMOLED Display with Narrow Border

Xue

Wang

et al. 2021

2021 IEEE 4th International Conference on Electronics Technology (ICET)

View full text Add to dashboard Cite

1.2: Invited Paper: Dynamic threshold voltage compensation IGZO‐GOA circuit for AMOLED display

Cited by 5 publications

References 5 publications

A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology

A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

Gate Driver Circuit for a 15-inch AMOLED Display with Narrow Border

Contact Info

Product

Resources

About