1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes [and QWIPs]

Khanna, Shyam M.; Estan, D.; Liu, H.C.; Gao, M.; Buchanan, M.; SpringThorpe, A. J.

doi:10.1109/23.903800

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…Details about the device characterization have been published previously [6], [7]. We provide here pertinent details for completeness of the present paper.…”

Section: Device Characterizationmentioning

confidence: 99%

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Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna¹,

Estan²,

Erhardt³

et al. 2004

IEEE Trans. Nucl. Sci.

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Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at fluences varying from 1 10 11 to 1 10 15 cm 2 . Light output degradation curves were obtained for each energy and the damage constant ( ) associated with these curves was determined according to the theory of Rose and Barnes. For proton energies less than 10 MeV, varies inversely with the proton energy ( ). At higher energies, is consistently above the 1 relationship. The change in nature of the energy dependence is attributed to nuclear interactions. Nonionizing energy loss calculations for the case of protons on GaN are presented. Good agreement between theory and experiment is obtained.Index Terms-Blue LEDs, energy dependence, gallium nitride, light emission degradation, non-ionizing energy loss (NIEL), optoelectronics, proton, quantum-well light-emitting diodes, radiation damage.

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“…Details about the device characterization have been published previously [6], [7]. We provide here pertinent details for completeness of the present paper.…”

Section: Device Characterizationmentioning

confidence: 99%

“…All irradiations at the University of Montreal and at TRIUMF were done at room temperature. The method used to irradiate the diodes at the University of Montreal and at TRIUMF have been described previously [6], [7]. We include key details of the irradiation procedure here for completeness.…”

Section: B Irradiation Proceduresmentioning

confidence: 99%

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna¹,

Estan²,

Erhardt³

et al. 2004

IEEE Trans. Nucl. Sci.

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“…Research has found that GaAs-based devices are relatively insensitive to displacement damage effects when compared to Si devices [27]. In recent decades, a considerable number of papers have been published on the radiation effects in both conventional [28,29] and quantum well [30][31][32][33] materials. However, little is known about the radiation effect on GaAs NWs.…”

Section: Introductionmentioning

confidence: 99%

Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors

Li¹,

Li²,

Tan³

et al. 2017

Nanotechnology

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With the recent advances in nanowire (NW) growth and fabrication, there has been rapid development and application of GaAs NWs in optoelectronics. It is also of importance to study the radiation tolerance of optoelectronic nano-devices for atomic energy and space-based applications. Here, photoluminescence (PL) and time-resolved photoluminescence measurements were carried out on GaAs/AlGaAs core/shell NWs at room temperature before and after 1 MeV proton irradiation with fluences ranging from 1.0 × 10-3.0 × 10 cm. It is found that the GaAs/AlGaAs core/shell NWs with smaller diameter show much less PL degradation compared with the ones with larger diameters. The increased radiation hardness is mainly attributed to the improvement of a room temperature dynamic-annealing mechanism near the surface of the NWs. We also found that the minority carrier lifetime is closely related to both the PL intensity and defect density induced by irradiation. Finally, GaAs/AlGaAs ensemble NW photodetectors operating in the near-infrared spectral regime have been demonstrated. The influence of proton irradiation on light and dark current characteristics also indicates that NW structures are a good potential candidate for radiation harsh-environment applications.

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“…[3][4][5] However, over the last few years, GaN has emerged as a reference material for the realization of both visible and ultraviolet LEDs, and high power/high efficiency transistors. Gallium nitride has an intrinsically high robustness to electric fields and to high temperatures.…”

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confidence: 99%

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Santi

Meneghini

Trivellin

et al. 2014

Applied Physics Letters

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This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10 11 , 10 13 , and 10 14 p þ /cm 2 ). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 C). V C 2014 AIP Publishing LLC.

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1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes [and QWIPs]

Cited by 6 publications

References 17 publications

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

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