{1 0 0}-Textured, piezoelectric Pb(Zrx, Ti1−x)O3 thin films for MEMS: integration, deposition and properties

Influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 thin films

“…15 Thus, MPB-PZT thin films are most important for the practical application. Bipolar pulse poling can be effective for MPB-PZT thin films as well as tetra-PZT thin films.…”

Piezoelectric Thick Films: Preparation and Characterization

“…In these cases, it is not practical to produce thick PZT films using standard sol-gel techniques, because of the increased cracking risk due to shrinkage nor is it desirable to produce thick films by a repetitive single layer deposition process due to the time required (Barrow et al, 1995;Zhou et al, 2000). The interest in ferroelectric lead zirconate titanate thick films for device applications, including high-frequency ferroelectric sonar transducers (Bernstein et al, 1997), microelectromechanical system devices (Polla & Schiller, 1995;Myers et al, 2003;(Akasheh et al, 2004), elastic surface wave devices (Cicco et al, 1996), hydrophones (Chan et al, 1999) and sensors (Xia et al, 2001), has increased in the last decades because PZT ferroelectric thick films possess the merits of both bulk and thin film materials (Barrow et al, 1997;Ledermann et al, 2003). PZT thick films devices not only work at low voltage and high frequency, as they are compatible with semiconductor integrated circuit, but also possess superior electric properties approaching near-bulk values.…”

Preface to Special Topic: Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

“…4 These include medical ultrasonic imaging, ferroelectric-based transducers, infrared imaging, and microelectromechanical systems. [5][6][7][8] Advances in sol-gel synthesis and other modern deposition methods (e.g., magnetron sputtering and pulsed laser deposition) and availability of high-quality ferroelectric films brought to the limelight the applications based on polarization switching, ranging from ferroelectric random access memories, 9-11 ferroelectric field effect transistors, 12,13 to, recently, ferroelectric tunneling barriers and memristive devices. [14][15][16][17] Despite multiple macroscopic studies and significant advances in theoretical understanding of ferroelectric phenomena from Landau-Ginzburg theory to soft mode concept and Berry phases, [18][19][20] the mesoscopic ferroelectric phenomena remain largely enigmatic.…”