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Ko, Yongmin; Jang, Jae-Min; Lee, S.; Yang, H. J.; Lee, W. H.; Reucroft, P. J.; Lee, J. G.

doi:10.1023/a:1021184726278

Cited by 16 publications

(6 citation statements)

References 17 publications

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“…First, contrary to the results in Ref. [4], some studies reveal that the additive of Ag or Sn impairs the thermal stability of Cu films due to the decrease of the melting temperature [13,14]. Besides, the reported resistivities of Cu alloy films vary from each another [15].…”

Section: Introductionmentioning

confidence: 67%

“…In addition, during the process of chemical mechanical polishing (CMP), the Cu interconnect is easily corroded and scratched. Other properties, such as the passivation of exposed Cu surface, the mechanical strength and surface roughness of Cu films, are equally important [3,4]. To address these problems, alloying Cu with immiscible elements has been proposed to develop new interconnect materials for advanced metallization [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…To address these problems, alloying Cu with immiscible elements has been proposed to develop new interconnect materials for advanced metallization [5,6]. Up to now, some dilute Cu alloy films have been studied to possess improved reliability together with other modified properties [4,[7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Wang¹,

Dong²,

Jiang³

et al. 2009

Surface and Coatings Technology

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Section: Introductionmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Wang¹,

Dong²,

Jiang³

et al. 2009

Surface and Coatings Technology

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“…The latter can be attributed to a high Si content in this coating. Copper is known to react with silicon already at 200 °C [47], whereas diffusion of copper in silicon nitride occurs at temperatures above 550 °C [48,49]. Therefore, during heating up to an annealing temperature of 1000 °C, copper atoms easily diffuse from the substrate into the Al 0.11 Si 0.89 N coating and partly react with silicon to form the metastable copper-enriched Cu 5 Si silicide phase revealed in the XRD-pattern.…”

Section: Discussionmentioning

confidence: 99%

Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

et al. 2019

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The effect of the elemental composition of AlxSi1−xN coatings deposited on Cu substrates by magnetron sputtering on their structure, mechanical properties and thermal cycling performance is studied. The coatings with Al-Si-N solid solution, two-phase (AlxSi1−xN nanocrystallites embedded in the SixNy tissue phase) and amorphous structure were obtained by varying Al/Si ratio. It is shown that polycrystalline coatings with a low Si content (Al0.88Si0.12N) are characterized by the highest thermal cycling resistance. While the coatings with a high and intermediate Si content (Al0.11Si0.89N and Al0.74Si0.26N) were subjected to cracking and spallation after the first cycle of annealing at a temperature of 1000 °C, delamination of the Al0.88Si0.12N coating was observed after 25 annealing cycles. The Al0.88Si0.12N coating also exhibited the best barrier performance against copper diffusion from the substrate. The effect of thermal stresses on the diffusion barrier performance of the coatings against copper diffusion is discussed.

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“…2) Sputtering has the advantage that there is little mixture of contaminants into the deposited films. Furthermore, sputtering can deposit Cu alloy films that improve the mechanical strength, 3) the thermal stability, [4][5][6][7][8][9] the oxidation resistance, 10,11) the adhesion, 12) the electromigration resistance, and the stress migration resistance. 13,14) In addition, even in electroplating, it is still necessary to sputter seed layers that act as electrodes for electroplating.…”

Section: Introductionmentioning

confidence: 99%

Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy

Yabuuchi

Kihara

Kubo

et al. 2013

Jpn. J. Appl. Phys.

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As a part of the LSI interconnect fabrication process, a post-deposition high-pressure annealing process is proposed for embedding copper into trench structures. The embedding property of sputtered Cu films has been recognized to be improved by adding hydrogen to the sputtering argon gas. In this study, to elucidate the effect of hydrogen on vacancy formation in sputtered Cu films, normal argon-sputtered and argon–hydrogen-sputtered Cu films were evaluated by positron annihilation spectroscopy. As a result, monovacancies with a concentration of more than 10-4 were observed in the argon–hydrogen-sputtered Cu films, whereas only one positron lifetime component corresponding to the grain boundary was detected in the normal argon-sputtered Cu films. This result means monovacancies are stabilized by adding hydrogen to sputtering gas. In the annealing process, the stabilized monovacancies began clustering at around 300 °C, which indicates the dissociation of monovacancy-hydrogen bonds. The introduced monovacancies may promote creep deformation during high-pressure annealing.

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Untitled

Cited by 16 publications

References 17 publications

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

Effect of Hydrogen on Vacancy Formation in Sputtered Cu Films Studied by Positron Annihilation Spectroscopy

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