The effect of chromium dopant on the microstructure and mechanical properties of sputter-deposited copper films

Wang, Xinjian; Dong, Xianping; Jiang, Changhui; Wu, Jiansheng

doi:10.1016/j.surfcoat.2009.03.018

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Copper Films1

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2009

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Cited by 5 publications

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“…Indeed, the film deposited at 250 °C has a thickness ~130 nm and a resistivity 6*10 -6 Ωcm, but ~270 nm thick film prepared at 280 °C has a resistivity of 4*10 -6 Ωcm. For comparison, Wang et al (9) reported that the resistivity of 1µm thick Cu sputtered film was 5.6*10 -6 Ωcm.…”

Section: Copper Filmsmentioning

confidence: 99%

CVD of Pure Copper Films from a Novel Amidinate Precursor

Krisyuk¹,

Aloui²,

Prudhomme³

et al. 2009

ECS Trans.

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This paper reports on the use of a novel copper(I) amidinate compound [Cu(i-Pr-MeAMD)] 2 to produce copper films in conventional low pressure CVD using hydrogen as reducing gasreagent. Copper films were deposited on steel, silicon and SiO 2 /Si substrates. Their composition, morphology, conductivity and growth rate were investigated in the temperature range 200 -350 °C at total pressure of 10 Torr. XRD and EPMA confirmed that the films are composed of polycrystalline copper metal without carbon and nitrogen impurities.

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Section: Copper Filmsmentioning

confidence: 99%