0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 [micro sign]m

Smith, Scott A.; Hopkins, James F.; Sun, Handong; Burns, D.; Calvez, S.; Dawson, Martin D.; Jouhti, T.; Konttinen, J.; Pessa, M.

doi:10.1049/el:20040049

Cited by 127 publications

(43 citation statements)

References 8 publications

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“…The simulated structure has been designed on the basis of the multi-quantum well GaInNAs/GaAs laser emitting at 1.32 µm and described in the paper [6]. It is placed on the GaAs substrate -its thickness has been assumed to be equal to 450 µm.…”

Section: Laser Structuresmentioning

confidence: 99%

“…Spectral and temperature dependences of the parameters can be found in references given in the table. The model has been calibrated using experimental results for the structure in the UHS configuration from [6]. The monomolecular recombination coefficient, internal losses and scattering coefficients of air-cap, air-heat spreader and heat spreader-cap interfaces have been used as fitting parameters.…”

Section: Carrier Transport Modulementioning

confidence: 99%

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Influence of Pumping Beam Width on Vecsel Output Power

Sokół

Sarzała

2014

International Journal of Electronics and Telecommunications

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Abstract-The paper is devoted to a numerical analysis of an influence of a pumping beam diameter on output power of optically pumped vertical-external-cavity surface-emitting lasers. Simulations have been carried out for a structure with a GaInNAs/GaAs active region operating at 1.32 µm. Various assembly configurations have been considered. Results obtained show that laser power scaling is strongly affected by thermal properties of the device.

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Section: Laser Structuresmentioning

confidence: 99%

Section: Carrier Transport Modulementioning

confidence: 99%

Influence of Pumping Beam Width on Vecsel Output Power

Sokół

Sarzała

2014

International Journal of Electronics and Telecommunications

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“…All VECSEL concepts, including a resonant sub-cavity which enhances the effective gain, suffer from a relatively high sensitivity to operating temperature changes [Kuz99,Tro04]. Such conventional QW-based T=8°C T=10°C T=15°C T=20°C T=25°C T=30°C T=35°C 21x SK-QD GS λ = 1210 nm VECSELs operating close to the target wavelength of 1220 nm face additional difficulties upon growth due to the employed highly strained QWs, and exhibit strong temperaturedependent characteristics limiting optimum laser performance to a narrow temperature window [Ger03,Hop04]. This sensitivity is caused by the diverging thermal shifts of the involved components.…”

Section: Temperature Stabilitymentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…A piece of the wafer is then soldered to the heatsink and the semiconductor substrate removed by a combination of mechanical/chemical etching. The second approach to SDL thermal management introduced by Sandia National Laboratories [49] and subsequently refined by the University of Strathclyde and collaborators [50,51] uses an unprocessed epilayer, grown mirror first, onto which a high conductivity platelet, referred to as a heatspreader, is bonded directly using liquid capillarity [52]. This composite is then clamped in a heatsinking mount using indium foil (although solder could also be used).…”

Section: Thermal Managementmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

Self Cite

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 [micro sign]m

Cited by 127 publications

References 8 publications

Influence of Pumping Beam Width on Vecsel Output Power

Influence of Pumping Beam Width on Vecsel Output Power

Design and Realization of Novel GaAs Based Laser Concepts

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

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