0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Hara, Naoki; Suehiro, Haruyoshi; Shima, M.; Kuroda, S.

doi:10.1109/55.553045

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…HIGFET devices are initially devoted to complementary high speed/low power digital systems [1], [2]. However, one can take profit of their intrinsic advantages for use in analog applications, as follows.…”

Section: Introductionmentioning

confidence: 99%

Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band

Touirat

Röger

Pesant

et al. 2001

IEEE Electron Device Lett.

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In this letter, an investigation of pseudomorphic Ga 0 25 Al 0 75 As/Ga 0 80 In 0 20 As/GaAs heterostructure insulatedgate FETs (HIGFET) for microwave power applications is presented. Devices have been fabricated using Au/WSi self-aligned gate technology with SiO 2 sidewalls. The fabrication process has been optimized in order to realize 0.3 m gate-length transistors with reduced short-channel effects and improved rf power performance. dc and rf extracted parameters let us expect very attractive capabilities: for N-type HIGFET, a current density of 460 mA/mm and an extrinsic transconductance of 480 mS/mm are obtained. Measurements at 10 GHz using load-pull power setup have been carried out: 300 mW/mm maximum output power, 14 dB linear gain, and 65% PAE, for low (3 V) value. From our knowledge, these power results are the first reported for 0.3 m-HIGFETs.

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Section: Introductionmentioning

confidence: 99%

Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band

Touirat

Röger

Pesant

et al. 2001

IEEE Electron Device Lett.

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“…6 Similar devices fabricated using a selfaligned Mg implant yielded a maximum transconductance of 68 mS/mm at 300 K and an f T of 11 GHz for a 0.3-μm gate length. 7 Another investigation involving an InGaP/In 0.15 Ga 0.85 As p-channel FET…”

mentioning

confidence: 99%

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Bennett¹,

Ancona²,

Boos³

2009

MRS Bull.

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Research in n-channel field-effect transistors based upon III-V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III-V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1-2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm 2 /Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n-and p-channel transistors.

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Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor

Tsai

2016

Superlattices and Microstructures

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0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Cited by 7 publications

References 7 publications

Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band

Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor

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