2018
DOI: 10.1109/tmtt.2017.2767593
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0.3-THz SiGe-Based High-Efficiency Push–Push VCOs With > 1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

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Cited by 41 publications
(8 citation statements)
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“…For shorter range applications, antennas can even be integrated on-chip [67] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [68], [69].…”
Section: ) Active Imagingmentioning
confidence: 99%
“…For shorter range applications, antennas can even be integrated on-chip [67] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [68], [69].…”
Section: ) Active Imagingmentioning
confidence: 99%
“…The circuit can deliver typical LO driving powers for mixers of 0 dBm up to a frequency of 350 GHz. Other methods of signal generation include the realization of integrated VCOs at such high frequencies [109]- [111]. Here, push-push oscillators operating at half the single-ended output frequency are favored.…”
Section: Toward Thz Radar Transceiversmentioning
confidence: 99%
“…For shorter range applications, antennas can even be integrated on-chip [39] in bulk CMOS for ultra-low form factor gesture recognition, vital sign monitoring and person detection and counting. It is expected that SiGe or III-V compounds will complement CMOS for the RF part when the carrier frequency is higher than about 200 GHz [40], [41].…”
Section: A Thz Imagingmentioning
confidence: 99%