0.13-/0.15-μm production reticle process window qualification procedure for 200-mm manufacturing fab

Chang, Zih-Wen; Wu, Chen-Ming; Mo, Mabel; Shieh, Chin-Chung; Cheng, Dong; Chen, Chun-Chien; Yang, Richard; Randall, David; Yu, Wen-Cheng

doi:10.1117/12.557698

Cited by 3 publications

(2 citation statements)

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“…Identification of a robust process window is a major challenge. CD metrology on a Focus Exposure Matrix (FEM) wafer provides sensitivity but has a limited sampling rate, as well as requiring prior knowledge of structures that are likely to fail [1]. Defect inspection provides much better sampling coverage, but the challenge is to isolate the systematic defects.…”

Section: Introductionmentioning

confidence: 99%

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

Chen¹,

Chen

Yen³

et al. 2008

SPIE Proceedings

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Identifying hotspots -structures that limit the lithography process window -become increasingly important as the industry relies heavily on RET to print sub-wavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout -to obtain the best sensitivity (b) Design Based Binning -for pattern repeater analysis (c) Intelligent sampling -for the best DOI sampling rate. This paper evaluates two different analysis strategies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.

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Section: Introductionmentioning

confidence: 99%

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

Chen¹,

Chen

Yen³

et al. 2008

SPIE Proceedings

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“…[1], [2] As the feature size continues shrinking, contact mask PQW needs to involve defect inspection not only at after development inspection (ADI) and after etch inspection (AEI) levels, but also at WCMP layer to determine whether the reticle is robust enough to allow etch process fully open the contact hole and achieve good electrical contact between tungsten plugs and silicon within the photolithography process window. Both eScan®300 that inspect defects and eProfile® that measures GLV and CD of contact holes and W-plugs of interest are very power tools for this application.…”

Section: Introductionmentioning

confidence: 99%

65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems

Hsu

Lin

Wu³

et al. 2006

SPIE Proceedings

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Optical proximity correction: A cross road of data flows

Bisschop¹

2016

Jpn. J. Appl. Phys.

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This paper reviews the various data flows that occur in the generation and verification of optical proximity correction (OPC) for an optical lithography photomask. First we review the models that are or can be used in the OPC model-calibration flow, with some emphasis on those models that are not yet standard practice. Through an efficient selection of calibration structures, the data amounts needed for model calibrations can be usually kept reasonably small. This is much less the case in the OPC verification step (computationally first and on-wafer afterwards), where data volumes can be very large. Especially the inspection of printed test wafer, where the printability of large number of structures needs to be assessed throughout the intended process window, currently presents important challenges as “hotspot” detection and printability quantification needs to be combined with a short turn-around time. We will discuss some of the approaches that are being employed to deal with these conflicting requirements.

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0.13-/0.15-μm production reticle process window qualification procedure for 200-mm manufacturing fab

Cited by 3 publications

References 0 publications

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems

Optical proximity correction: A cross road of data flows

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