“…Buried-Pt gates have been utilized to achieve high Schottky barrier height, B , as well as to reduce d d . 1,3,5,6) Strained In 0:45 Al 0:55 As/In 0:75 Ga 025 As heterostructures have also been employed to achieve high barrier height with Ti/Pt/Au gate metallization, because B is the higher for In x Al 1Àx As with higher Al content. 6) In the present study, the thickness of heterostructures has been scaled down (d d scaling) to achieve positive threshold voltage, utilizing Ti/Pt/Au metallization, which has better reliability performance than the buried-Pt gate although its barrier height, B , is lower than that of buried-Pt gates.…”