A 200-GHz True E-Mode Low-Noise MHEMT

Maher, Hassan; Makoudi, Ikram El; Frijlink, P.; Smith, Derek R.; Rocchi, Marc; Bollaert, S.; Lepilliet, S.; Dambrine, G.

doi:10.1109/ted.2007.899377

Cited by 6 publications

(1 citation statement)

References 19 publications

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“…A possible approach is the use of III-V HEMT (High Electron Mobility Transistor) [5] [6] which, with InGaAs channel material, have demonstrated not only very high microwave performance but also a good potential for logic applications [7] [8]. HEMTs are also widely used to design Low Noise Amplifiers (LNA) [9][10] [11] [12] [13] [14] for very sensitive receivers. However, due to high gate leakage current inducing high DC power consumption, they tend to reach their scaling limits in terms of gate length and layer structure.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Shi

Saint-Martin

Bournel

et al. 2013

Solid-State Electronics

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III-V Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with a high-κ dielectric gate stack are investigated as a possible route to enhance the performance of either microwave or logic circuits with low supply voltage (VDD). The intrinsic performance of III-V MOSFETs in both static and dynamic regimes under low VDD is estimated using device Monte Carlo simulation. The characteristics of a Bulk-like and XOI-like III-V MOSFETs are quantitatively assessed and compared in terms of DC transconductance, high frequency performance and noise behavior. Finally, the comparison with Si-based devices shows the potential of III-V nano-MOSFET architectures for high-frequency and low noise application under low operating power.

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