0.1 dB/cm waveguide losses in single-mode SOI rib waveguides

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

“…This result simplifies the optical calculations, since the spatial distribution of the refractive index and absorption coefficient in the cavity when carriers are injected in the guiding region can be considered uniform. A carrier concentration of cm is predicted for a forward bias of 0.87 V, which induces a real refractive-index change of [see (1)] and an absorption coefficient variation of 4.35 cm [see (2)]. Our simulations show that some of the injected free carriers into the low-doped -type Si layer spread laterally away from the central guiding region as the distance between the lateral trenches is increased, in agreement with previous works [24].…”

“…Si passive structures, such as waveguides, couplers, and filters have been extensively studied [2]- [4]. Less work has been reported on Si active (or tunable) integrated devices, such as modulators and switches, despite their importance as a means of manipulating light beams for information processing (e.g., coding-decoding, routing, multiplexing, timing, logic operations, etc.)…”

Low-Loss Silicon Waveguides and Grating Couplers Fabricated Using Anisotropic Wet Etching Technique

“…This is due to large side wall roughness left behind by the dry etching process. Low-Loss Silicon Waveguide Frontiers in Materials | www.frontiersin.org Rib waveguides can reduce the propagation loss to 0.2 dB/cm by reducing the overlap of optical mode with the waveguide side walls (Schmidtchen et al, 1991;Fischer et al, 1996). However, they are restricted to large cross-sectional dimensions in couple of microns.…”

Silicon-Based Waveguide Technology for Wavelength Division Multiplexing

“…Intrinsic loss in undoped single crystal silicon is very low for wavelengths longer than the absorption edge near 1100 nm, and reported losses in large cross-section processed waveguides are as low as 0.1 dB/cm in the near infrared [60,61]. In the case of doped silicon waveguides, free carrier induced absorption varies linearly with the density of electrons and holes [62].…”