We have studied Peltier coefficients () in Cu-Ni-based submicron-sized junctions with two different Cu-Ni layer thicknesses (t Cu-Ni s) and buffer materials. The junctions for both buffer materials, Ru and Ta, s howed enhanced when t Cu-Ni was fixed at 100 nm. We obtained s of ~245 and ~480 mV for Ru and Ta-buffered junctions, respectively. These were more than 10 times larger than that estimated from the bulk Cu-Ni/Ru(or Au) contact (~ 11 mV). Concerning the t Cu-Ni dependence of for Ru-buffered junctions they did not demonstrate any enhanced at t Cu-Ni = 30 n m which was only ~6.5 mV, while they sh owed large s at t Cu-Ni = 10 0 nm as m entioned above. The results suggested that the enhanced acqui red s ufficient vol ume of eac h col umnar grai n i n t he C u-Ni layer t o i nduce t he i nner-grain inhomogeneity.
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