A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd•m −2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
This paper reports that bunchy flake-like nano-graphite crystallite films (BNGCFs) were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission (FE) I–V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0 V/μm were obtained. The J–E data did not follow the original Fowler–Nordheim (F–N) relation since they were not well represented in the F–N plot by a straight line. A model considering the F–N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E < 8.8 V/μm.
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