To study the wet oxidation process and mechanism in the Vertical-Cavity-Surface-Emitting-Laser (VCSEL) fabrications, a special material structure was designed and grown by the Metal-Organic Chemical Vapor Deposition(MOCVD) method. The samples formed by photolithography and dry etching were subjected to wet oxidation for different time, and the oxidation degree was determined by the surface morphology and the cross-sectional structure. In this study, a linear tendency was revealed between oxidation depth and oxidation time during a relatively short oxidation period, then it transformed into parabolic tendency and gradually became saturated with increasing oxidation time. Moreover, it was found that the oxidation rate of Al 0.98 Ga 0.02 As was higher than that of Al 0.9 Ga 0.1 As layer by one order of magnitude, and the speed of oxidation processing was accelerated as the Al 0.9 Ga 0.1 As layer thickened. Finally, the lateral oxidation process of Al 0.98 Ga 0.02 As layer in the confined space was interpreted by a modified one-dimensional Deal-Grove model.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.